Semipolar (101̄1̄) InGaN/GaN laser diodes on bulk GaN substrates

Anurag Tyagi, Hong Zhong, Roy B. Chung, Daniel F. Feezell, Makoto Saito, Kenji Fujito, James S. Speck, Steven P. Denbaars, Shuji Nakamura

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56 Scopus citations


The first semipolar nitride laser diodes (LDs) have been realized on low extended defect density semipolar (101̄Ī) GaN bulk substrates. The LDs were grown by conventional metal organic chemical vapor deposition (MOCVD). Broad area lasers were fabricated and tested under pulsed conditions. Lasing was observed at a duty cycle of 0.025% with a threshold current density (J th) of 18 kA/cm2. Stimulated emission was observed at 405.9 nm with a full width at half maximum (FWHM) of less than 0.3 nm.

Original languageEnglish
Pages (from-to)L444-L445
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number17-19
StatePublished - 11 May 2007


  • (101̄1̄) plane
  • GaN bulk substrate
  • InGaN
  • Laser diode
  • Semipolar


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