Semipolar (101̄1̄) InGaN/GaN laser diodes on bulk GaN substrates

Anurag Tyagi; Hong Zhong; Roy B. Chung; Daniel F. Feezell; Makoto Saito; Kenji Fujito; James S. Speck; Steven P. Denbaars; Shuji Nakamura

doi:10.1143/JJAP.46.L444

Semipolar (101̄1̄) InGaN/GaN laser diodes on bulk GaN substrates

Anurag Tyagi, Hong Zhong, Roy B. Chung, Daniel F. Feezell, Makoto Saito, Kenji Fujito, James S. Speck, Steven P. Denbaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

The first semipolar nitride laser diodes (LDs) have been realized on low extended defect density semipolar (101̄Ī) GaN bulk substrates. The LDs were grown by conventional metal organic chemical vapor deposition (MOCVD). Broad area lasers were fabricated and tested under pulsed conditions. Lasing was observed at a duty cycle of 0.025% with a threshold current density (J _th) of 18 kA/cm². Stimulated emission was observed at 405.9 nm with a full width at half maximum (FWHM) of less than 0.3 nm.

Original language	English
Pages (from-to)	L444-L445
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	17-19
DOIs	https://doi.org/10.1143/JJAP.46.L444
State	Published - 11 May 2007

Keywords

(101̄1̄) plane
GaN bulk substrate
InGaN
Laser diode
Semipolar

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10.1143/JJAP.46.L444

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title = "Semipolar (10{\=1}{\=1}) InGaN/GaN laser diodes on bulk GaN substrates",

abstract = "The first semipolar nitride laser diodes (LDs) have been realized on low extended defect density semipolar (10{\=1}Ī) GaN bulk substrates. The LDs were grown by conventional metal organic chemical vapor deposition (MOCVD). Broad area lasers were fabricated and tested under pulsed conditions. Lasing was observed at a duty cycle of 0.025% with a threshold current density (J th) of 18 kA/cm2. Stimulated emission was observed at 405.9 nm with a full width at half maximum (FWHM) of less than 0.3 nm.",

keywords = "(10{\=1}{\=1}) plane, GaN bulk substrate, InGaN, Laser diode, Semipolar",

author = "Anurag Tyagi and Hong Zhong and Chung, {Roy B.} and Feezell, {Daniel F.} and Makoto Saito and Kenji Fujito and Speck, {James S.} and Denbaars, {Steven P.} and Shuji Nakamura",

year = "2007",

month = may,

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doi = "10.1143/JJAP.46.L444",

language = "English",

volume = "46",

pages = "L444--L445",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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publisher = "Japan Society of Applied Physics",

number = "17-19",

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TY - JOUR

T1 - Semipolar (101̄1̄) InGaN/GaN laser diodes on bulk GaN substrates

AU - Tyagi, Anurag

AU - Zhong, Hong

AU - Chung, Roy B.

AU - Feezell, Daniel F.

AU - Saito, Makoto

AU - Fujito, Kenji

AU - Speck, James S.

AU - Denbaars, Steven P.

AU - Nakamura, Shuji

PY - 2007/5/11

Y1 - 2007/5/11

N2 - The first semipolar nitride laser diodes (LDs) have been realized on low extended defect density semipolar (101̄Ī) GaN bulk substrates. The LDs were grown by conventional metal organic chemical vapor deposition (MOCVD). Broad area lasers were fabricated and tested under pulsed conditions. Lasing was observed at a duty cycle of 0.025% with a threshold current density (J th) of 18 kA/cm2. Stimulated emission was observed at 405.9 nm with a full width at half maximum (FWHM) of less than 0.3 nm.

AB - The first semipolar nitride laser diodes (LDs) have been realized on low extended defect density semipolar (101̄Ī) GaN bulk substrates. The LDs were grown by conventional metal organic chemical vapor deposition (MOCVD). Broad area lasers were fabricated and tested under pulsed conditions. Lasing was observed at a duty cycle of 0.025% with a threshold current density (J th) of 18 kA/cm2. Stimulated emission was observed at 405.9 nm with a full width at half maximum (FWHM) of less than 0.3 nm.

KW - (101̄1̄) plane

KW - GaN bulk substrate

KW - InGaN

KW - Laser diode

KW - Semipolar

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U2 - 10.1143/JJAP.46.L444

DO - 10.1143/JJAP.46.L444

M3 - Article

AN - SCOPUS:34547902121

SN - 0021-4922

VL - 46

SP - L444-L445

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 17-19

ER -

Semipolar (101̄1̄) InGaN/GaN laser diodes on bulk GaN substrates

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