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Semipolar AlN on bulk GaN for UV-C diode lasers

  • Roy B. Chung
  • , Erin C. Young
  • , Daniel A. Haeger
  • , Steven P. DenBaars
  • , James S. Speck
  • , Daniel A. Cohen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The use of nonpolar or semipolar AlGaN for UV-C diode lasers avoids the compromises in gain, injection efficiency, and ohmic losses imposed on c-plane lasers by the unusual valence band structure of AlGaN alloys.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2011
StatePublished - 2011
EventQuantum Electronics and Laser Science Conference, QELS 2011 - Baltimore, MD, United States
Duration: 1 May 20116 May 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceQuantum Electronics and Laser Science Conference, QELS 2011
Country/TerritoryUnited States
CityBaltimore, MD
Period1/05/116/05/11

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