Abstract
Pt/ ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H 2 is introduced into a N 2 ambient at 25°C. The rectifying current-voltage(I-V) characteristic shows a non-reversible collapse to Ohmic behavior when as little as 50 ppm of H 2 is present in the N 2 ambient. At higher temperatures, the recovery is thermally activated with an activation energy of ∼0.25 eV. This suggests that introduction of hydrogen shallow donors into the ZnO is a contributor to the change in current of the diodes.
| Original language | English |
|---|---|
| Pages | 152-160 |
| Number of pages | 9 |
| State | Published - 2004 |
| Event | State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: 9 May 2004 → 14 May 2004 |
Conference
| Conference | State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium |
|---|---|
| Country/Territory | United States |
| City | San Antonio, TX |
| Period | 9/05/04 → 14/05/04 |