Sensitivity of Pt/Zno Schottky diode characteristics to hydrogen

Suku Kim; B. S. Kang; F. Ren; K. Ip; Y. W. Heo; D. P. Norton; S. J. Pearton

doi:10.1063/1.1664012

Sensitivity of Pt/Zno Schottky diode characteristics to hydrogen

Suku Kim
, B. S. Kang
, F. Ren
, K. Ip
, Y. W. Heo
, D. P. Norton
, S. J. Pearton

University of Florida

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

The changes in Pt/bulk ZnO Schottky diodes on the introduction of H ₂ above 50 ppm in a N₂ ambient were analyzed. A nonreversible collapse to Ohmic behavior was shown by the rectifying current-voltage (I-V) characteristic. The recovery was thermally activated with an activation energy of ∼0.25 eV at higher temperatures. The results show that introduction of hydrogen shallow donors into the ZnO is a contributor to the change in current of the diodes.

Original language	English
Pages (from-to)	1698-1700
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	10
DOIs	https://doi.org/10.1063/1.1664012
State	Published - 8 Mar 2004

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10.1063/1.1664012

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@article{0970231ba1b345e2be92e45d507eef22,

title = "Sensitivity of Pt/Zno Schottky diode characteristics to hydrogen",

abstract = "The changes in Pt/bulk ZnO Schottky diodes on the introduction of H 2 above 50 ppm in a N2 ambient were analyzed. A nonreversible collapse to Ohmic behavior was shown by the rectifying current-voltage (I-V) characteristic. The recovery was thermally activated with an activation energy of ∼0.25 eV at higher temperatures. The results show that introduction of hydrogen shallow donors into the ZnO is a contributor to the change in current of the diodes.",

author = "Suku Kim and Kang, \{B. S.\} and F. Ren and K. Ip and Heo, \{Y. W.\} and Norton, \{D. P.\} and Pearton, \{S. J.\}",

year = "2004",

month = mar,

day = "8",

doi = "10.1063/1.1664012",

language = "English",

volume = "84",

pages = "1698--1700",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Sensitivity of Pt/Zno Schottky diode characteristics to hydrogen

AU - Kim, Suku

AU - Kang, B. S.

AU - Ren, F.

AU - Ip, K.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Pearton, S. J.

PY - 2004/3/8

Y1 - 2004/3/8

N2 - The changes in Pt/bulk ZnO Schottky diodes on the introduction of H 2 above 50 ppm in a N2 ambient were analyzed. A nonreversible collapse to Ohmic behavior was shown by the rectifying current-voltage (I-V) characteristic. The recovery was thermally activated with an activation energy of ∼0.25 eV at higher temperatures. The results show that introduction of hydrogen shallow donors into the ZnO is a contributor to the change in current of the diodes.

AB - The changes in Pt/bulk ZnO Schottky diodes on the introduction of H 2 above 50 ppm in a N2 ambient were analyzed. A nonreversible collapse to Ohmic behavior was shown by the rectifying current-voltage (I-V) characteristic. The recovery was thermally activated with an activation energy of ∼0.25 eV at higher temperatures. The results show that introduction of hydrogen shallow donors into the ZnO is a contributor to the change in current of the diodes.

UR - https://www.scopus.com/pages/publications/1842424464

U2 - 10.1063/1.1664012

DO - 10.1063/1.1664012

M3 - Article

AN - SCOPUS:1842424464

SN - 0003-6951

VL - 84

SP - 1698

EP - 1700

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Sensitivity of Pt/Zno Schottky diode characteristics to hydrogen

Abstract

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