Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application

Seongjae Cho; In Man Kang; Kyung Rok Kim; Byung Gook Park; James S. Harris

doi:10.1063/1.4833295

Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application

Seongjae Cho, In Man Kang, Kyung Rok Kim, Byung Gook Park, James S. Harris

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this work, Ge-based high-hole-mobility transistor with Si compatibility is designed, and its performance is evaluated. A 2-dimensional hole gas is effectively constructed by a AlGaAs/Ge/Si heterojunction with a sufficiently large valence band offset. Moreover, an intrinsic Ge channel is exploited so that high hole mobility is preserved without dopant scattering. Effects of design parameters such as gate length, Ge channel thickness, and aluminum fraction in the barrier material on device characteristics are thoroughly investigated through device simulations. A high on-current above 30 μA/μm along with a low subthreshold swing was obtained from an optimized planar device for low-power applications.

Original language	English
Article number	222102
Journal	Applied Physics Letters
Volume	103
Issue number	22
DOIs	https://doi.org/10.1063/1.4833295
State	Published - 25 Nov 2013

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abstract = "In this work, Ge-based high-hole-mobility transistor with Si compatibility is designed, and its performance is evaluated. A 2-dimensional hole gas is effectively constructed by a AlGaAs/Ge/Si heterojunction with a sufficiently large valence band offset. Moreover, an intrinsic Ge channel is exploited so that high hole mobility is preserved without dopant scattering. Effects of design parameters such as gate length, Ge channel thickness, and aluminum fraction in the barrier material on device characteristics are thoroughly investigated through device simulations. A high on-current above 30 μA/μm along with a low subthreshold swing was obtained from an optimized planar device for low-power applications.",

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AU - Cho, Seongjae

AU - Man Kang, In

AU - Rok Kim, Kyung

AU - Park, Byung Gook

AU - Harris, James S.

PY - 2013/11/25

Y1 - 2013/11/25

N2 - In this work, Ge-based high-hole-mobility transistor with Si compatibility is designed, and its performance is evaluated. A 2-dimensional hole gas is effectively constructed by a AlGaAs/Ge/Si heterojunction with a sufficiently large valence band offset. Moreover, an intrinsic Ge channel is exploited so that high hole mobility is preserved without dopant scattering. Effects of design parameters such as gate length, Ge channel thickness, and aluminum fraction in the barrier material on device characteristics are thoroughly investigated through device simulations. A high on-current above 30 μA/μm along with a low subthreshold swing was obtained from an optimized planar device for low-power applications.

AB - In this work, Ge-based high-hole-mobility transistor with Si compatibility is designed, and its performance is evaluated. A 2-dimensional hole gas is effectively constructed by a AlGaAs/Ge/Si heterojunction with a sufficiently large valence band offset. Moreover, an intrinsic Ge channel is exploited so that high hole mobility is preserved without dopant scattering. Effects of design parameters such as gate length, Ge channel thickness, and aluminum fraction in the barrier material on device characteristics are thoroughly investigated through device simulations. A high on-current above 30 μA/μm along with a low subthreshold swing was obtained from an optimized planar device for low-power applications.

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Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application

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