Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors

Jae Sung Lee; Jae Hwa Seo; Seongjae Cho; Jung Hee Lee; Shin Won Kang; Jin Hyuk Bae; Eou Sik Cho; In Man Kang

doi:10.1016/j.cap.2013.03.012

Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors

Jae Sung Lee
, Jae Hwa Seo
, Seongjae Cho
, Jung Hee Lee
, Shin Won Kang
, Jin Hyuk Bae
, Eou Sik Cho
, In Man Kang

Kyungpook National University
Stanford University
Gachon University

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

In this work, the effects of underlapping drain junction on the performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) have been studied in terms of direct-current (DC) characteristics including on-current (I_on), off-current (I_off), subthreshold swing (S), and I_on/I_off ratio. In addition, the dependences of intrinsic delay time (τ) and radio-frequency (RF) performances including cut-off frequency (f_T) and maximum oscillation frequency (f _max) on gate-drain capacitance (C_gd) with the underlapping were investigated as the gate length (L_gate) is scaled. A GAA TFET with asymmetric junctions, with an underlap at the drain side, demonstrated DC and RF performances superior to those of a device with symmetric junctions.

Original language	English
Pages (from-to)	1143-1149
Number of pages	7
Journal	Current Applied Physics
Volume	13
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2013.03.012
State	Published - Aug 2013

Keywords

Asymmetric junctions
Drain underlap
Gate-all-around (GAA)
Radio-frequency (RF)
Tunneling field-effect transistor (TFET)

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10.1016/j.cap.2013.03.012

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title = "Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors",

abstract = "In this work, the effects of underlapping drain junction on the performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) have been studied in terms of direct-current (DC) characteristics including on-current (Ion), off-current (Ioff), subthreshold swing (S), and Ion/Ioff ratio. In addition, the dependences of intrinsic delay time (τ) and radio-frequency (RF) performances including cut-off frequency (fT) and maximum oscillation frequency (f max) on gate-drain capacitance (Cgd) with the underlapping were investigated as the gate length (Lgate) is scaled. A GAA TFET with asymmetric junctions, with an underlap at the drain side, demonstrated DC and RF performances superior to those of a device with symmetric junctions.",

keywords = "Asymmetric junctions, Drain underlap, Gate-all-around (GAA), Radio-frequency (RF), Tunneling field-effect transistor (TFET)",

author = "Lee, \{Jae Sung\} and Seo, \{Jae Hwa\} and Seongjae Cho and Lee, \{Jung Hee\} and Kang, \{Shin Won\} and Bae, \{Jin Hyuk\} and Cho, \{Eou Sik\} and Kang, \{In Man\}",

year = "2013",

month = aug,

doi = "10.1016/j.cap.2013.03.012",

language = "English",

volume = "13",

pages = "1143--1149",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

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AU - Lee, Jae Sung

AU - Seo, Jae Hwa

AU - Cho, Seongjae

AU - Lee, Jung Hee

AU - Kang, Shin Won

AU - Bae, Jin Hyuk

AU - Cho, Eou Sik

AU - Kang, In Man

PY - 2013/8

Y1 - 2013/8

N2 - In this work, the effects of underlapping drain junction on the performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) have been studied in terms of direct-current (DC) characteristics including on-current (Ion), off-current (Ioff), subthreshold swing (S), and Ion/Ioff ratio. In addition, the dependences of intrinsic delay time (τ) and radio-frequency (RF) performances including cut-off frequency (fT) and maximum oscillation frequency (f max) on gate-drain capacitance (Cgd) with the underlapping were investigated as the gate length (Lgate) is scaled. A GAA TFET with asymmetric junctions, with an underlap at the drain side, demonstrated DC and RF performances superior to those of a device with symmetric junctions.

AB - In this work, the effects of underlapping drain junction on the performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) have been studied in terms of direct-current (DC) characteristics including on-current (Ion), off-current (Ioff), subthreshold swing (S), and Ion/Ioff ratio. In addition, the dependences of intrinsic delay time (τ) and radio-frequency (RF) performances including cut-off frequency (fT) and maximum oscillation frequency (f max) on gate-drain capacitance (Cgd) with the underlapping were investigated as the gate length (Lgate) is scaled. A GAA TFET with asymmetric junctions, with an underlap at the drain side, demonstrated DC and RF performances superior to those of a device with symmetric junctions.

KW - Asymmetric junctions

KW - Drain underlap

KW - Gate-all-around (GAA)

KW - Radio-frequency (RF)

KW - Tunneling field-effect transistor (TFET)

UR - https://www.scopus.com/pages/publications/84877577578

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DO - 10.1016/j.cap.2013.03.012

M3 - Article

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SN - 1567-1739

VL - 13

SP - 1143

EP - 1149

JO - Current Applied Physics

JF - Current Applied Physics

IS - 6

ER -

Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors

Abstract

Keywords

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