Single-event transient characteristics of vertical gate-all-around junctionless field-effect transistor on bulk substrate

In this work, we investigated the single-event transient (SET) characteristics of a vertical junctionless field-effect transistor (VJLFET) on a bulk substrate using three-dimensional technology computer aided design (3-D TCAD) simulation. Electron–hole pairs (EHPs) generated by the heavy ion irradiation induced a high peak drain current pulse (I_{DS_P}). The VJLFET was significantly affected by the ion strike injected through the drain region than the source region because the ion injected through the drain region directly supplied electron and hole carriers. Hole charges generated by the heavy ion irradiation were accumulated by the floating body effect, which was caused by the depletion region under the gate dielectric. This phenomenon led to a higher drain current after the irradiation (I_{DS_A}) than the off-state current (I_off). Since the floating body effect was reduced by applying Germanium (Ge) material in the source region, the VJLFET with the Ge source region shows merits in term of radiation hardness.