Sintering behavior and electrical properties of In 2O 3 ceramics with ZnO and Sb 2O 5 Co-substitution

Kyung Han Seo; Joon Hyung Lee; Young Woo Heo; Jeong Joo Kim

doi:10.1166/jno.2011.1183

Sintering behavior and electrical properties of In ₂O ₃ ceramics with ZnO and Sb ₂O ₅ Co-substitution

Kyung Han Seo, Joon Hyung Lee, Young Woo Heo, Jeong Joo Kim

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Zn ²⁺ and Sb ⁵⁺ were co-doped in In ₂Oi ceramics. To maintain their charge neutrality, they were substituted for In ³⁺ with a Sb ⁵⁺:Zn ²⁺ = 1:2 ratio. The solubility limit of the dopants and the phase development, sintering behavior, and electrical characteristics of the co-doped In ₂O ₃ specimens were examined. From the X-ray diffraction analysis, the solubility limit was found to have been about 5 at% for Sb and 10 at% for Zn. Over the solubility limit, the β-Zn ₇Sb ₂O ₁₂ phase appeared as a second phase. Within the solubility limit, the lattice constant of the In2O3 phase decreased as the amount of the dopants increased. The second phase suppressed the grain growth during the sintering and contributed to the decrease in the electron mobility.

Original language	English
Pages (from-to)	348-352
Number of pages	5
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	6
Issue number	3
DOIs	https://doi.org/10.1166/jno.2011.1183
State	Published - Aug 2011

Keywords

Charge Compensation
Co-Doping
Microstructure
Solubility
Transparent Conducting Oxide

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title = "Sintering behavior and electrical properties of In 2O 3 ceramics with ZnO and Sb 2O 5 Co-substitution",

abstract = "Zn 2+ and Sb 5+ were co-doped in In 2Oi ceramics. To maintain their charge neutrality, they were substituted for In 3+ with a Sb 5+:Zn 2+ = 1:2 ratio. The solubility limit of the dopants and the phase development, sintering behavior, and electrical characteristics of the co-doped In 2O 3 specimens were examined. From the X-ray diffraction analysis, the solubility limit was found to have been about 5 at% for Sb and 10 at% for Zn. Over the solubility limit, the β-Zn 7Sb 2O 12 phase appeared as a second phase. Within the solubility limit, the lattice constant of the In2O3 phase decreased as the amount of the dopants increased. The second phase suppressed the grain growth during the sintering and contributed to the decrease in the electron mobility.",

keywords = "Charge Compensation, Co-Doping, Microstructure, Solubility, Transparent Conducting Oxide",

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year = "2011",

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T1 - Sintering behavior and electrical properties of In 2O 3 ceramics with ZnO and Sb 2O 5 Co-substitution

AU - Seo, Kyung Han

AU - Lee, Joon Hyung

AU - Heo, Young Woo

AU - Kim, Jeong Joo

PY - 2011/8

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N2 - Zn 2+ and Sb 5+ were co-doped in In 2Oi ceramics. To maintain their charge neutrality, they were substituted for In 3+ with a Sb 5+:Zn 2+ = 1:2 ratio. The solubility limit of the dopants and the phase development, sintering behavior, and electrical characteristics of the co-doped In 2O 3 specimens were examined. From the X-ray diffraction analysis, the solubility limit was found to have been about 5 at% for Sb and 10 at% for Zn. Over the solubility limit, the β-Zn 7Sb 2O 12 phase appeared as a second phase. Within the solubility limit, the lattice constant of the In2O3 phase decreased as the amount of the dopants increased. The second phase suppressed the grain growth during the sintering and contributed to the decrease in the electron mobility.

AB - Zn 2+ and Sb 5+ were co-doped in In 2Oi ceramics. To maintain their charge neutrality, they were substituted for In 3+ with a Sb 5+:Zn 2+ = 1:2 ratio. The solubility limit of the dopants and the phase development, sintering behavior, and electrical characteristics of the co-doped In 2O 3 specimens were examined. From the X-ray diffraction analysis, the solubility limit was found to have been about 5 at% for Sb and 10 at% for Zn. Over the solubility limit, the β-Zn 7Sb 2O 12 phase appeared as a second phase. Within the solubility limit, the lattice constant of the In2O3 phase decreased as the amount of the dopants increased. The second phase suppressed the grain growth during the sintering and contributed to the decrease in the electron mobility.

KW - Charge Compensation

KW - Co-Doping

KW - Microstructure

KW - Solubility

KW - Transparent Conducting Oxide

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Sintering behavior and electrical properties of In ₂O ₃ ceramics with ZnO and Sb ₂O ₅ Co-substitution

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Keywords

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