Sintering behavior and electrical properties of In2O3 ceramics with ZnO and Sb2O5 Co-substitution

Kyung Han Seo; Joon Hyung Lee; Young Woo Heo; Jeong Joo Kim

doi:10.1166/jno.2011.1183

Sintering behavior and electrical properties of In₂O₃ ceramics with ZnO and Sb₂O₅ Co-substitution

Kyung Han Seo, Joon Hyung Lee, Young Woo Heo, Jeong Joo Kim

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Zn²⁺ and Sb⁵⁺ were co-doped in In₂Oi ceramics. To maintain their charge neutrality, they were substituted for In ³⁺ with a Sb⁵⁺:Zn²⁺ = 1:2 ratio. The solubility limit of the dopants and the phase development, sintering behavior, and electrical characteristics of the co-doped In₂O₃ specimens were examined. From the X-ray diffraction analysis, the solubility limit was found to have been about 5 at% for Sb and 10 at% for Zn. Over the solubility limit, the β-Zn₇Sb₂O₁₂ phase appeared as a second phase. Within the solubility limit, the lattice constant of the In2O3 phase decreased as the amount of the dopants increased. The second phase suppressed the grain growth during the sintering and contributed to the decrease in the electron mobility.

Original language	English
Pages (from-to)	348-352
Number of pages	5
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	6
Issue number	3
DOIs	https://doi.org/10.1166/jno.2011.1183
State	Published - Aug 2011

Keywords

Charge Compensation
Co-Doping
Microstructure
Solubility
Transparent Conducting Oxide

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title = "Sintering behavior and electrical properties of In2O3 ceramics with ZnO and Sb2O5 Co-substitution",

abstract = "Zn2+ and Sb5+ were co-doped in In2Oi ceramics. To maintain their charge neutrality, they were substituted for In 3+ with a Sb5+:Zn2+ = 1:2 ratio. The solubility limit of the dopants and the phase development, sintering behavior, and electrical characteristics of the co-doped In2O3 specimens were examined. From the X-ray diffraction analysis, the solubility limit was found to have been about 5 at\% for Sb and 10 at\% for Zn. Over the solubility limit, the β-Zn7Sb2O12 phase appeared as a second phase. Within the solubility limit, the lattice constant of the In2O3 phase decreased as the amount of the dopants increased. The second phase suppressed the grain growth during the sintering and contributed to the decrease in the electron mobility.",

keywords = "Charge Compensation, Co-Doping, Microstructure, Solubility, Transparent Conducting Oxide",

author = "Seo, \{Kyung Han\} and Lee, \{Joon Hyung\} and Heo, \{Young Woo\} and Kim, \{Jeong Joo\}",

year = "2011",

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doi = "10.1166/jno.2011.1183",

language = "English",

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T1 - Sintering behavior and electrical properties of In2O3 ceramics with ZnO and Sb2O5 Co-substitution

AU - Seo, Kyung Han

AU - Lee, Joon Hyung

AU - Heo, Young Woo

AU - Kim, Jeong Joo

PY - 2011/8

Y1 - 2011/8

N2 - Zn2+ and Sb5+ were co-doped in In2Oi ceramics. To maintain their charge neutrality, they were substituted for In 3+ with a Sb5+:Zn2+ = 1:2 ratio. The solubility limit of the dopants and the phase development, sintering behavior, and electrical characteristics of the co-doped In2O3 specimens were examined. From the X-ray diffraction analysis, the solubility limit was found to have been about 5 at% for Sb and 10 at% for Zn. Over the solubility limit, the β-Zn7Sb2O12 phase appeared as a second phase. Within the solubility limit, the lattice constant of the In2O3 phase decreased as the amount of the dopants increased. The second phase suppressed the grain growth during the sintering and contributed to the decrease in the electron mobility.

AB - Zn2+ and Sb5+ were co-doped in In2Oi ceramics. To maintain their charge neutrality, they were substituted for In 3+ with a Sb5+:Zn2+ = 1:2 ratio. The solubility limit of the dopants and the phase development, sintering behavior, and electrical characteristics of the co-doped In2O3 specimens were examined. From the X-ray diffraction analysis, the solubility limit was found to have been about 5 at% for Sb and 10 at% for Zn. Over the solubility limit, the β-Zn7Sb2O12 phase appeared as a second phase. Within the solubility limit, the lattice constant of the In2O3 phase decreased as the amount of the dopants increased. The second phase suppressed the grain growth during the sintering and contributed to the decrease in the electron mobility.

KW - Charge Compensation

KW - Co-Doping

KW - Microstructure

KW - Solubility

KW - Transparent Conducting Oxide

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DO - 10.1166/jno.2011.1183

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JO - Journal of Nanoelectronics and Optoelectronics

JF - Journal of Nanoelectronics and Optoelectronics

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ER -

Sintering behavior and electrical properties of In₂O₃ ceramics with ZnO and Sb₂O₅ Co-substitution

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Keywords

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