Size dependence of the photoluminescence decay time in unstrained GaAS quantum dots

Jong Su Kim; Hoonsoo Kang; Clare C. Byeon; Mun Seok Jeong; Sang Youp Yim; Jun Oh Kim; Sang Jun Lee; Sam Kyu Noh; Jin Soo Kim; J. Y. Leem

doi:10.3938/jkps.55.1051

Size dependence of the photoluminescence decay time in unstrained GaAS quantum dots

Jong Su Kim, Hoonsoo Kang, Clare C. Byeon, Mun Seok Jeong, Sang Youp Yim, Jun Oh Kim, Sang Jun Lee, Sam Kyu Noh, Jin Soo Kim, J. Y. Leem

School of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We report the size dependence of the photoluminescence (PL) decay time of unstrained GaAs quantum dot (QD) ensembles grown on an Al_0.3Ga_0.7As/GaAs (100) surface by using droplet epitaxy. The density of GaAs QDs is 3 × 10⁹/cm², which indicates that each QD is isolated from neighboring QDs. The low-temperature PL spectrum of the GaAs QD ensembles shows a Gausian profile with a linewidth broadening of 30 nm. The PL decay time of the GaAs QDs increases monotonically with increasing emission wavelength, which corresponds to the dot size. This result can be explained by a reduction in the exciton oscillator strength in larger dots. In addition, the PL decay time decreases with increasing excitation power. This can be explained by the state filling effect, which leads to an increase in electron-hole wave-function overlapping.

Original language	English
Pages (from-to)	1051-1055
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	3
DOIs	https://doi.org/10.3938/jkps.55.1051
State	Published - Sep 2009

Keywords

GaAs
Photoluminescence
Time-resolved PL
Unstrained quantum dots

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@article{bc73be3d625949c7ae7a1ab04e598f5a,

title = "Size dependence of the photoluminescence decay time in unstrained GaAS quantum dots",

abstract = "We report the size dependence of the photoluminescence (PL) decay time of unstrained GaAs quantum dot (QD) ensembles grown on an Al0.3Ga0.7As/GaAs (100) surface by using droplet epitaxy. The density of GaAs QDs is 3 × 109/cm2, which indicates that each QD is isolated from neighboring QDs. The low-temperature PL spectrum of the GaAs QD ensembles shows a Gausian profile with a linewidth broadening of 30 nm. The PL decay time of the GaAs QDs increases monotonically with increasing emission wavelength, which corresponds to the dot size. This result can be explained by a reduction in the exciton oscillator strength in larger dots. In addition, the PL decay time decreases with increasing excitation power. This can be explained by the state filling effect, which leads to an increase in electron-hole wave-function overlapping.",

keywords = "GaAs, Photoluminescence, Time-resolved PL, Unstrained quantum dots",

author = "Kim, {Jong Su} and Hoonsoo Kang and Byeon, {Clare C.} and Jeong, {Mun Seok} and Yim, {Sang Youp} and Kim, {Jun Oh} and Lee, {Sang Jun} and Noh, {Sam Kyu} and Kim, {Jin Soo} and Leem, {J. Y.}",

year = "2009",

month = sep,

doi = "10.3938/jkps.55.1051",

language = "English",

volume = "55",

pages = "1051--1055",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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TY - JOUR

T1 - Size dependence of the photoluminescence decay time in unstrained GaAS quantum dots

AU - Kim, Jong Su

AU - Kang, Hoonsoo

AU - Byeon, Clare C.

AU - Jeong, Mun Seok

AU - Yim, Sang Youp

AU - Kim, Jun Oh

AU - Lee, Sang Jun

AU - Noh, Sam Kyu

AU - Kim, Jin Soo

AU - Leem, J. Y.

PY - 2009/9

Y1 - 2009/9

N2 - We report the size dependence of the photoluminescence (PL) decay time of unstrained GaAs quantum dot (QD) ensembles grown on an Al0.3Ga0.7As/GaAs (100) surface by using droplet epitaxy. The density of GaAs QDs is 3 × 109/cm2, which indicates that each QD is isolated from neighboring QDs. The low-temperature PL spectrum of the GaAs QD ensembles shows a Gausian profile with a linewidth broadening of 30 nm. The PL decay time of the GaAs QDs increases monotonically with increasing emission wavelength, which corresponds to the dot size. This result can be explained by a reduction in the exciton oscillator strength in larger dots. In addition, the PL decay time decreases with increasing excitation power. This can be explained by the state filling effect, which leads to an increase in electron-hole wave-function overlapping.

AB - We report the size dependence of the photoluminescence (PL) decay time of unstrained GaAs quantum dot (QD) ensembles grown on an Al0.3Ga0.7As/GaAs (100) surface by using droplet epitaxy. The density of GaAs QDs is 3 × 109/cm2, which indicates that each QD is isolated from neighboring QDs. The low-temperature PL spectrum of the GaAs QD ensembles shows a Gausian profile with a linewidth broadening of 30 nm. The PL decay time of the GaAs QDs increases monotonically with increasing emission wavelength, which corresponds to the dot size. This result can be explained by a reduction in the exciton oscillator strength in larger dots. In addition, the PL decay time decreases with increasing excitation power. This can be explained by the state filling effect, which leads to an increase in electron-hole wave-function overlapping.

KW - GaAs

KW - Photoluminescence

KW - Time-resolved PL

KW - Unstrained quantum dots

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U2 - 10.3938/jkps.55.1051

DO - 10.3938/jkps.55.1051

M3 - Article

AN - SCOPUS:79954512038

SN - 0374-4884

VL - 55

SP - 1051

EP - 1055

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Size dependence of the photoluminescence decay time in unstrained GaAS quantum dots

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Keywords

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