Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory

In order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND flash memory. Since channel hole defects lead to catastrophic failure (i.e., malfunction of basic NAND operations), detecting and screening defects in advance is one of the key challenges of guaranteeing the quality of flash products in the NAND manufacturing process. Based on analysis of the physical and electrical mechanisms of the channel hole defect, we have developed a two-step test procedure that consists of pattern-based and stress-based screen methodologies. By optimizing test patterns depending on the type of defect, the pattern-based screen is effective for detecting the type of Hard channel hole defects. The stress-based screen is carefully implemented to detect hidden Soft channel hole defects without degrading the reliability of NAND flash memory. In addition, we have attempted to further optimize the current version of our technique to minimize test time overhead, thus enabling 72.2% improvement in total test time. Experimental results using real 160 3D NAND flash chips show that our technique can efficiently detect and screen out various types of channel hole defects with minimum test time and negligible degradation in the flash reliability.