SnO₂: CuSb₂O₆ thin films prepared by pulsed laser deposition

SnO₂ thin films doped with CuSb₂O₆ were prepared by pulsed laser deposition method, in an attempt to evaluate the effect of Cu and Sb co-doping on optical and electrical properties. Alkaline-free borosilicate glass substrates were used as substrate where the substrate temperature was maintained in the range of 575∼650°C during deposition with oxygen pressure of 3∼5 mTorr and laser energy density of 1 Jcm ^-2. The minimum electrical resistivity value was obtained from SnO₂:8%CuSb₂O₆ films, which was approximately 1.3 × 10^-3 Ωcm, while its optical transmittance is relatively poor with ∼46% at 6000Å. The highest optical transmittance value was obtained from SnO₂:2%CuSb₂O₆ films, which was about 80% at 6000, where its electrical resistivity value was 5.9 × 10^-3 Ωcm.