Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory

Kyoungdu Kim; Woongki Hong; Changmin Lee; Lee Won-Yong; Do Won Kim; Hyeon Joong Kim; Kwon Hyuk-Jun; Hongki Kang; Jaewon Jang

doi:10.1088/2053-1591/ac3400

Sol-gel-processed amorphous-phase ZrO₂ based resistive random access memory

Kyoungdu Kim, Woongki Hong, Changmin Lee, Lee Won-Yong, Do Won Kim, Hyeon Joong Kim, Kwon Hyuk-Jun, Hongki Kang, Jaewon Jang

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

In this study, sol–gel-processed amorphous-phase ZrO₂ was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO₂/Ag RRAM devices exhibit the properties of bipolar RRAMs. The effect of the post-annealing temperature on the electrical properties of the ZrO₂ RRAM was investigated. Unlike the ZrO₂ films annealed at 400 and 500 °C, those annealed at 300 °C were in amorphous phase. The RRAM based on the amorphous-phase ZrO₂ exhibited an improved high-resistance state (HRS) to low-resistance state ratio (over 10⁶) as well as promising retention and endurance characteristics without deterioration. Furthermore, its disordered nature, which causes efficient carrier scattering, resulted in low carrier mobility and the lowest leakage current, influencing the HRS values.

Original language	English
Article number	A18
Journal	Materials Research Express
Volume	8
Issue number	11
DOIs	https://doi.org/10.1088/2053-1591/ac3400
State	Published - Nov 2021

Keywords

Amorphous phase
Electrochemical metallization cell
Resistive random access memory
Sol-gel
ZrO

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title = "Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory",

abstract = "In this study, sol–gel-processed amorphous-phase ZrO2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO2/Ag RRAM devices exhibit the properties of bipolar RRAMs. The effect of the post-annealing temperature on the electrical properties of the ZrO2 RRAM was investigated. Unlike the ZrO2 films annealed at 400 and 500 °C, those annealed at 300 °C were in amorphous phase. The RRAM based on the amorphous-phase ZrO2 exhibited an improved high-resistance state (HRS) to low-resistance state ratio (over 106) as well as promising retention and endurance characteristics without deterioration. Furthermore, its disordered nature, which causes efficient carrier scattering, resulted in low carrier mobility and the lowest leakage current, influencing the HRS values.",

keywords = "Amorphous phase, Electrochemical metallization cell, Resistive random access memory, Sol-gel, ZrO",

author = "Kyoungdu Kim and Woongki Hong and Changmin Lee and Lee Won-Yong and Kim, \{Do Won\} and \{Joong Kim\}, Hyeon and Kwon Hyuk-Jun and Hongki Kang and Jaewon Jang",

year = "2021",

month = nov,

doi = "10.1088/2053-1591/ac3400",

language = "English",

volume = "8",

journal = "Materials Research Express",

issn = "2053-1591",

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TY - JOUR

T1 - Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory

AU - Kim, Kyoungdu

AU - Hong, Woongki

AU - Lee, Changmin

AU - Won-Yong, Lee

AU - Kim, Do Won

AU - Joong Kim, Hyeon

AU - Hyuk-Jun, Kwon

AU - Kang, Hongki

AU - Jang, Jaewon

PY - 2021/11

Y1 - 2021/11

N2 - In this study, sol–gel-processed amorphous-phase ZrO2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO2/Ag RRAM devices exhibit the properties of bipolar RRAMs. The effect of the post-annealing temperature on the electrical properties of the ZrO2 RRAM was investigated. Unlike the ZrO2 films annealed at 400 and 500 °C, those annealed at 300 °C were in amorphous phase. The RRAM based on the amorphous-phase ZrO2 exhibited an improved high-resistance state (HRS) to low-resistance state ratio (over 106) as well as promising retention and endurance characteristics without deterioration. Furthermore, its disordered nature, which causes efficient carrier scattering, resulted in low carrier mobility and the lowest leakage current, influencing the HRS values.

AB - In this study, sol–gel-processed amorphous-phase ZrO2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO2/Ag RRAM devices exhibit the properties of bipolar RRAMs. The effect of the post-annealing temperature on the electrical properties of the ZrO2 RRAM was investigated. Unlike the ZrO2 films annealed at 400 and 500 °C, those annealed at 300 °C were in amorphous phase. The RRAM based on the amorphous-phase ZrO2 exhibited an improved high-resistance state (HRS) to low-resistance state ratio (over 106) as well as promising retention and endurance characteristics without deterioration. Furthermore, its disordered nature, which causes efficient carrier scattering, resulted in low carrier mobility and the lowest leakage current, influencing the HRS values.

KW - Amorphous phase

KW - Electrochemical metallization cell

KW - Resistive random access memory

KW - Sol-gel

KW - ZrO

UR - https://www.scopus.com/pages/publications/85119417173

U2 - 10.1088/2053-1591/ac3400

DO - 10.1088/2053-1591/ac3400

M3 - Article

AN - SCOPUS:85119417173

SN - 2053-1591

VL - 8

JO - Materials Research Express

JF - Materials Research Express

IS - 11

M1 - A18

ER -

Sol-gel-processed amorphous-phase ZrO₂ based resistive random access memory

Abstract

Keywords

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