Sol-gel processed Mg-doped In2O3 thin-film transistors

Taegyun Kim; Bongho Jang; Sojeong Lee; Won Yong Lee; Jaewon Jang

doi:10.23919/AM-FPD.2018.8437415

Sol-gel processed Mg-doped In₂O₃ thin-film transistors

Taegyun Kim, Bongho Jang, Sojeong Lee, Won Yong Lee, Jaewon Jang

School of Electronics Engineering

Kyungpook National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We have shown that the magnesium doping effect causes indium oxide with a high negative threshold voltage, close to zero bias, to operate in the enhancement mode, with minimal mobility degradation. At 0.2wt%, the MIO film had a mobility of 11.96 cm²/Vs-s and a threshold voltage of-4 V, having shifted from -18 V.

Original language	English
Title of host publication	AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9784990875350
DOIs	https://doi.org/10.23919/AM-FPD.2018.8437415
State	Published - 15 Aug 2018
Event	25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 - Kyoto, Japan Duration: 3 Jul 2018 → 6 Jul 2018

Publication series

Name	AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference	25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018
Country/Territory	Japan
City	Kyoto
Period	3/07/18 → 6/07/18

Access to Document

10.23919/AM-FPD.2018.8437415

Cite this

Kim, T., Jang, B., Lee, S., Lee, W. Y., & Jang, J. (2018). Sol-gel processed Mg-doped In₂O₃ thin-film transistors. In AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings Article 8437415 (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD.2018.8437415

Kim, Taegyun ; Jang, Bongho ; Lee, Sojeong et al. / Sol-gel processed Mg-doped In₂O₃ thin-film transistors. AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

@inproceedings{9f9c74f8c36e472590ca8a3fdc4db755,

title = "Sol-gel processed Mg-doped In2O3 thin-film transistors",

abstract = "We have shown that the magnesium doping effect causes indium oxide with a high negative threshold voltage, close to zero bias, to operate in the enhancement mode, with minimal mobility degradation. At 0.2wt%, the MIO film had a mobility of 11.96 cm2/Vs-s and a threshold voltage of-4 V, having shifted from -18 V.",

author = "Taegyun Kim and Bongho Jang and Sojeong Lee and Lee, {Won Yong} and Jaewon Jang",

note = "Publisher Copyright: {\textcopyright} 2018 FTFMD.; 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 ; Conference date: 03-07-2018 Through 06-07-2018",

year = "2018",

month = aug,

day = "15",

doi = "10.23919/AM-FPD.2018.8437415",

language = "English",

isbn = "9784990875350",

series = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices",

address = "United States",

}

Kim, T, Jang, B, Lee, S, Lee, WY & Jang, J 2018, Sol-gel processed Mg-doped In₂O₃ thin-film transistors. in AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8437415, AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018, Kyoto, Japan, 3/07/18. https://doi.org/10.23919/AM-FPD.2018.8437415

Sol-gel processed Mg-doped In₂O₃ thin-film transistors. / Kim, Taegyun; Jang, Bongho; Lee, Sojeong et al.
AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 8437415 (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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PY - 2018/8/15

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N2 - We have shown that the magnesium doping effect causes indium oxide with a high negative threshold voltage, close to zero bias, to operate in the enhancement mode, with minimal mobility degradation. At 0.2wt%, the MIO film had a mobility of 11.96 cm2/Vs-s and a threshold voltage of-4 V, having shifted from -18 V.

AB - We have shown that the magnesium doping effect causes indium oxide with a high negative threshold voltage, close to zero bias, to operate in the enhancement mode, with minimal mobility degradation. At 0.2wt%, the MIO film had a mobility of 11.96 cm2/Vs-s and a threshold voltage of-4 V, having shifted from -18 V.

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Kim T, Jang B, Lee S, Lee WY, Jang J. Sol-gel processed Mg-doped In₂O₃ thin-film transistors. In AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8437415. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). doi: 10.23919/AM-FPD.2018.8437415