Solvent-tolerant patterning of poly(3-hexylthiophene) film by subtractive photolithography

Woo Young Kim, Won Yong Lee, Gwang Jae Jeon, Hyun Bin Shim, In Ku Kang, Jae Hyun Kim, Gyung Tae Park, Jin Hyuk Kwon, Hee Chul Lee, Jin Hyuk Bae

Research output: Contribution to journalArticlepeer-review


This study investigates how the fringing field affects the total current flow within a conducting polymer. In order to extract the fringing field component of bar pattern resistors, a solvent-assisted patterning method using subtractive photolithography was successfully established for the conducting polymer poly(3-hexylthiophene). By comparing the current quantities of unpatterned and patterned resistors, a conductance factor for the fringing field was calculated, proving to be almost constant regardless of the resistor length. It is therefore concluded that the length as well as the width of the conducting polymer film need to be suitably patterned for the precise operation of organic electronic devices. In this regard, the patterning method developed will be useful for the fabrication of micro-scale devices.

Original languageEnglish
Pages (from-to)36-42
Number of pages7
JournalMolecular Crystals and Liquid Crystals
Issue number1
StatePublished - 13 Aug 2014


  • Fringing field
  • Lift-off
  • P3HT
  • Photolithography
  • Poly(3-hexylthiophene)


Dive into the research topics of 'Solvent-tolerant patterning of poly(3-hexylthiophene) film by subtractive photolithography'. Together they form a unique fingerprint.

Cite this