Spectroscopic Understanding of Structural and Electrical Property Variations in Dopant-Free ZnO Films

Hyegyeong Kim; Ji Woong Kim; Dooyong Lee; Won Jae Lee; Jong Seong Bae; Jaekwang Lee; Sungkyun Park

doi:10.1016/j.jmst.2016.10.009

Spectroscopic Understanding of Structural and Electrical Property Variations in Dopant-Free ZnO Films

Hyegyeong Kim
, Ji Woong Kim
, Dooyong Lee
, Won Jae Lee
, Jong Seong Bae
, Jaekwang Lee
, Sungkyun Park

Pusan National University
Dongeui University
Korea Basic Science Institute

Research output: Contribution to journal › Article › peer-review

Abstract

Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments (O₂, in-Air, N₂ and vacuum) resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N₂ environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical (structural, electrical) and chemical properties: The crystallinity of ZnO films is closely related to Zn–O bonding, whereas carrier concentration is associated with V_O (oxygen vacancy).

Original language	English
Pages (from-to)	523-526
Number of pages	4
Journal	Journal of Materials Science and Technology
Volume	33
Issue number	6
DOIs	https://doi.org/10.1016/j.jmst.2016.10.009
State	Published - Jun 2017

Keywords

Annealing
Environmental stability
Oxygen vacancies
ZnO films

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10.1016/j.jmst.2016.10.009

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title = "Spectroscopic Understanding of Structural and Electrical Property Variations in Dopant-Free ZnO Films",

abstract = "Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments (O2, in-Air, N2 and vacuum) resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical (structural, electrical) and chemical properties: The crystallinity of ZnO films is closely related to Zn–O bonding, whereas carrier concentration is associated with VO (oxygen vacancy).",

keywords = "Annealing, Environmental stability, Oxygen vacancies, ZnO films",

author = "Hyegyeong Kim and Kim, \{Ji Woong\} and Dooyong Lee and Lee, \{Won Jae\} and Bae, \{Jong Seong\} and Jaekwang Lee and Sungkyun Park",

note = "Publisher Copyright: {\textcopyright} 2016",

year = "2017",

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doi = "10.1016/j.jmst.2016.10.009",

language = "English",

volume = "33",

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T1 - Spectroscopic Understanding of Structural and Electrical Property Variations in Dopant-Free ZnO Films

AU - Kim, Hyegyeong

AU - Kim, Ji Woong

AU - Lee, Dooyong

AU - Lee, Won Jae

AU - Bae, Jong Seong

AU - Lee, Jaekwang

AU - Park, Sungkyun

PY - 2017/6

Y1 - 2017/6

N2 - Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments (O2, in-Air, N2 and vacuum) resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical (structural, electrical) and chemical properties: The crystallinity of ZnO films is closely related to Zn–O bonding, whereas carrier concentration is associated with VO (oxygen vacancy).

AB - Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments (O2, in-Air, N2 and vacuum) resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical (structural, electrical) and chemical properties: The crystallinity of ZnO films is closely related to Zn–O bonding, whereas carrier concentration is associated with VO (oxygen vacancy).

KW - Annealing

KW - Environmental stability

KW - Oxygen vacancies

KW - ZnO films

UR - https://www.scopus.com/pages/publications/85006857948

U2 - 10.1016/j.jmst.2016.10.009

DO - 10.1016/j.jmst.2016.10.009

M3 - Article

AN - SCOPUS:85006857948

SN - 1005-0302

VL - 33

SP - 523

EP - 526

JO - Journal of Materials Science and Technology

JF - Journal of Materials Science and Technology

IS - 6

ER -

Spectroscopic Understanding of Structural and Electrical Property Variations in Dopant-Free ZnO Films

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Keywords

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