Sputtering yield and secondary electron emission coefficient (γ) of the MgO, MgAl2O4 and MgAl2O4/MgO thin film grown on the Cu substrate by using the Focused Ion Beam

Kang Won Jung; H. J. Lee; W. H. Jeong; H. J. Oh; E. H. Choi; Y. H. Seo; S. O. Kang; C. W. Park

Sputtering yield and secondary electron emission coefficient (γ) of the MgO, MgAl₂O₄ and MgAl₂O₄/MgO thin film grown on the Cu substrate by using the Focused Ion Beam

Kang Won Jung, H. J. Lee, W. H. Jeong, H. J. Oh, E. H. Choi, Y. H. Seo, S. O. Kang, C. W. Park

School of Mechanical Engineering

Kwangwoon University

Research output: Contribution to journal › Conference article › peer-review

Abstract

We obtained sputtering yields for the MgO, MgAl₂O₄ and MgAl₂O₄/MgO films using the FIB system. MgAl ₂O₄/MgO protective layers have been found to have less 24 ~ 30% sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated Ga⁺ ion beam whose energies ranged from 10 keV to 14 keV. And MgAl₂O₄ layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that MgAl₂O ₄/MgO and MgO have secondary electron emission coefficient(γ) values from 0.09 up to 0.12 for Ne⁺ ion whose energies ranged from 50 eV to 200 eV.

Original language	English
Pages (from-to)	877-881
Number of pages	5
Journal	Proceedings of International Meeting on Information Display
Volume	2006
State	Published - 2006
Event	IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of Duration: 22 Aug 2006 → 25 Aug 2006

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@article{c207591793d64a7389207214f5aa305d,

title = "Sputtering yield and secondary electron emission coefficient (γ) of the MgO, MgAl2O4 and MgAl2O4/MgO thin film grown on the Cu substrate by using the Focused Ion Beam",

abstract = "We obtained sputtering yields for the MgO, MgAl2O4 and MgAl2O4/MgO films using the FIB system. MgAl 2O4/MgO protective layers have been found to have less 24 ~ 30% sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated Ga+ ion beam whose energies ranged from 10 keV to 14 keV. And MgAl2O4 layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that MgAl2O 4/MgO and MgO have secondary electron emission coefficient(γ) values from 0.09 up to 0.12 for Ne+ ion whose energies ranged from 50 eV to 200 eV.",

author = "Jung, {Kang Won} and Lee, {H. J.} and Jeong, {W. H.} and Oh, {H. J.} and Choi, {E. H.} and Seo, {Y. H.} and Kang, {S. O.} and Park, {C. W.}",

year = "2006",

language = "English",

volume = "2006",

pages = "877--881",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference ; Conference date: 22-08-2006 Through 25-08-2006",

}

Sputtering yield and secondary electron emission coefficient (γ) of the MgO, MgAl₂O₄ and MgAl₂O₄/MgO thin film grown on the Cu substrate by using the Focused Ion Beam. / Jung, Kang Won; Lee, H. J.; Jeong, W. H. et al.
In: Proceedings of International Meeting on Information Display, Vol. 2006, 2006, p. 877-881.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Sputtering yield and secondary electron emission coefficient (γ) of the MgO, MgAl2O4 and MgAl2O4/MgO thin film grown on the Cu substrate by using the Focused Ion Beam

AU - Jung, Kang Won

AU - Lee, H. J.

AU - Jeong, W. H.

AU - Oh, H. J.

AU - Choi, E. H.

AU - Seo, Y. H.

AU - Kang, S. O.

AU - Park, C. W.

PY - 2006

Y1 - 2006

N2 - We obtained sputtering yields for the MgO, MgAl2O4 and MgAl2O4/MgO films using the FIB system. MgAl 2O4/MgO protective layers have been found to have less 24 ~ 30% sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated Ga+ ion beam whose energies ranged from 10 keV to 14 keV. And MgAl2O4 layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that MgAl2O 4/MgO and MgO have secondary electron emission coefficient(γ) values from 0.09 up to 0.12 for Ne+ ion whose energies ranged from 50 eV to 200 eV.

AB - We obtained sputtering yields for the MgO, MgAl2O4 and MgAl2O4/MgO films using the FIB system. MgAl 2O4/MgO protective layers have been found to have less 24 ~ 30% sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated Ga+ ion beam whose energies ranged from 10 keV to 14 keV. And MgAl2O4 layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that MgAl2O 4/MgO and MgO have secondary electron emission coefficient(γ) values from 0.09 up to 0.12 for Ne+ ion whose energies ranged from 50 eV to 200 eV.

UR - http://www.scopus.com/inward/record.url?scp=33846158462&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33846158462

SN - 1738-7558

VL - 2006

SP - 877

EP - 881

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference

Y2 - 22 August 2006 through 25 August 2006

ER -

Sputtering yield and secondary electron emission coefficient (γ) of the MgO, MgAl₂O₄ and MgAl₂O₄/MgO thin film grown on the Cu substrate by using the Focused Ion Beam

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