Steep Slope Field-Effect Transistors with Ag/TiO2-Based Threshold Switching Device

Jeonghwan Song; Jiyong Woo; Sangheon Lee; Amit Prakash; Jongmyung Yoo; Kibong Moon; Hyunsang Hwang

doi:10.1109/LED.2016.2566661

Steep Slope Field-Effect Transistors with Ag/TiO₂-Based Threshold Switching Device

Jeonghwan Song, Jiyong Woo, Sangheon Lee, Amit Prakash, Jongmyung Yoo, Kibong Moon, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

In this letter, we demonstrate a steep slope field-effect transistor (FET) using a threshold switching (TS) device. The Ag/TiO₂-based TS device reported in our previous work was implemented in series with the drain region of a transistor. Since the TS device has an abrupt transition between the OFF- and ON-states and vice versa, the transistor has a 5-mV/decade subthreshold slope and a high ON/OFF-current ratio (I_ONI_OFF) of > 10⁷ with a low drain voltage (0.3 V). Furthermore, the threshold voltage (V_th, FET}}) of the transistor can be tuned by controlling the thickness of the TS device.

Original language	English
Article number	7468532
Pages (from-to)	932-934
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	37
Issue number	7
DOIs	https://doi.org/10.1109/LED.2016.2566661
State	Published - Jul 2016

Keywords

field-effect transistor
steep slope
subthreshold slope
Threshold switching

Access to Document

10.1109/LED.2016.2566661

Cite this

@article{d6c6ea9b7a0547108349803bf1563d68,

title = "Steep Slope Field-Effect Transistors with Ag/TiO2-Based Threshold Switching Device",

abstract = "In this letter, we demonstrate a steep slope field-effect transistor (FET) using a threshold switching (TS) device. The Ag/TiO2-based TS device reported in our previous work was implemented in series with the drain region of a transistor. Since the TS device has an abrupt transition between the OFF- and ON-states and vice versa, the transistor has a 5-mV/decade subthreshold slope and a high ON/OFF-current ratio (IONIOFF) of > 107 with a low drain voltage (0.3 V). Furthermore, the threshold voltage (Vth, FET\}\}) of the transistor can be tuned by controlling the thickness of the TS device.",

keywords = "field-effect transistor, steep slope, subthreshold slope, Threshold switching",

author = "Jeonghwan Song and Jiyong Woo and Sangheon Lee and Amit Prakash and Jongmyung Yoo and Kibong Moon and Hyunsang Hwang",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = jul,

doi = "10.1109/LED.2016.2566661",

language = "English",

volume = "37",

pages = "932--934",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Steep Slope Field-Effect Transistors with Ag/TiO2-Based Threshold Switching Device

AU - Song, Jeonghwan

AU - Woo, Jiyong

AU - Lee, Sangheon

AU - Prakash, Amit

AU - Yoo, Jongmyung

AU - Moon, Kibong

AU - Hwang, Hyunsang

PY - 2016/7

Y1 - 2016/7

N2 - In this letter, we demonstrate a steep slope field-effect transistor (FET) using a threshold switching (TS) device. The Ag/TiO2-based TS device reported in our previous work was implemented in series with the drain region of a transistor. Since the TS device has an abrupt transition between the OFF- and ON-states and vice versa, the transistor has a 5-mV/decade subthreshold slope and a high ON/OFF-current ratio (IONIOFF) of > 107 with a low drain voltage (0.3 V). Furthermore, the threshold voltage (Vth, FET}}) of the transistor can be tuned by controlling the thickness of the TS device.

AB - In this letter, we demonstrate a steep slope field-effect transistor (FET) using a threshold switching (TS) device. The Ag/TiO2-based TS device reported in our previous work was implemented in series with the drain region of a transistor. Since the TS device has an abrupt transition between the OFF- and ON-states and vice versa, the transistor has a 5-mV/decade subthreshold slope and a high ON/OFF-current ratio (IONIOFF) of > 107 with a low drain voltage (0.3 V). Furthermore, the threshold voltage (Vth, FET}}) of the transistor can be tuned by controlling the thickness of the TS device.

KW - field-effect transistor

KW - steep slope

KW - subthreshold slope

KW - Threshold switching

UR - https://www.scopus.com/pages/publications/84976907527

U2 - 10.1109/LED.2016.2566661

DO - 10.1109/LED.2016.2566661

M3 - Article

AN - SCOPUS:84976907527

SN - 0741-3106

VL - 37

SP - 932

EP - 934

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 7468532

ER -

Steep Slope Field-Effect Transistors with Ag/TiO₂-Based Threshold Switching Device

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this