Structural and electrical properties of (Al or Ga) and P co-doped ZnO thin films prepared by pulsed laser deposition

Woo Seok Noh; Jung A. Lee; Joon Hyung Lee; Young Woo Heo; Jeong Joo Kim

doi:10.1166/jno.2015.1780

Structural and electrical properties of (Al or Ga) and P co-doped ZnO thin films prepared by pulsed laser deposition

Woo Seok Noh, Jung A. Lee, Joon Hyung Lee, Young Woo Heo, Jeong Joo Kim

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The effect of oxygen partial pressure was investigated on the electrical properties of P0-02Zn0-98O, Al_0.01P_0.02Zn_0.97O, and Ga_0.01P_0.02Zn_0.97O thin films grown by pulsed laser deposition. For the P_0.02Zn_0.98O and Ga_0.01P_0.02Zn_0.97O thin films, the carrier concentration decreased continuously with increasing oxygen partial pressure, which signifies that within the oxygen partial pressure range studied here, the film has n-type electrical characteristics. On the other hand, the carrier concentration in the Al_0.01P_0.02Zn_0.97O thin films began to increase at an oxygen partial pressure of 200 mTorr, suggesting a transition from n- to p-type behavior. Depth profiles obtained by secondary ion mass spectroscopy showed that more P was dissolved and more Zn vacancies were formed in the Al_0.01P_0.02Zn_0.97O thin films as the oxygen partial pressure was increased, indicating favorable conditions for hole generation.

Original language	English
Pages (from-to)	449-454
Number of pages	6
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	10
Issue number	4
DOIs	https://doi.org/10.1166/jno.2015.1780
State	Published - 1 Aug 2015

Keywords

Co-doping
N-type
P-type
PLD
Thin film
ZnO

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title = "Structural and electrical properties of (Al or Ga) and P co-doped ZnO thin films prepared by pulsed laser deposition",

abstract = "The effect of oxygen partial pressure was investigated on the electrical properties of P0-02Zn0-98O, Al0.01P0.02Zn0.97O, and Ga0.01P0.02Zn0.97O thin films grown by pulsed laser deposition. For the P0.02Zn0.98O and Ga0.01P0.02Zn0.97O thin films, the carrier concentration decreased continuously with increasing oxygen partial pressure, which signifies that within the oxygen partial pressure range studied here, the film has n-type electrical characteristics. On the other hand, the carrier concentration in the Al0.01P0.02Zn0.97O thin films began to increase at an oxygen partial pressure of 200 mTorr, suggesting a transition from n- to p-type behavior. Depth profiles obtained by secondary ion mass spectroscopy showed that more P was dissolved and more Zn vacancies were formed in the Al0.01P0.02Zn0.97O thin films as the oxygen partial pressure was increased, indicating favorable conditions for hole generation.",

keywords = "Co-doping, N-type, P-type, PLD, Thin film, ZnO",

author = "Noh, {Woo Seok} and Lee, {Jung A.} and Lee, {Joon Hyung} and Heo, {Young Woo} and Kim, {Jeong Joo}",

year = "2015",

month = aug,

day = "1",

doi = "10.1166/jno.2015.1780",

language = "English",

volume = "10",

pages = "449--454",

journal = "Journal of Nanoelectronics and Optoelectronics",

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TY - JOUR

T1 - Structural and electrical properties of (Al or Ga) and P co-doped ZnO thin films prepared by pulsed laser deposition

AU - Noh, Woo Seok

AU - Lee, Jung A.

AU - Lee, Joon Hyung

AU - Heo, Young Woo

AU - Kim, Jeong Joo

PY - 2015/8/1

Y1 - 2015/8/1

N2 - The effect of oxygen partial pressure was investigated on the electrical properties of P0-02Zn0-98O, Al0.01P0.02Zn0.97O, and Ga0.01P0.02Zn0.97O thin films grown by pulsed laser deposition. For the P0.02Zn0.98O and Ga0.01P0.02Zn0.97O thin films, the carrier concentration decreased continuously with increasing oxygen partial pressure, which signifies that within the oxygen partial pressure range studied here, the film has n-type electrical characteristics. On the other hand, the carrier concentration in the Al0.01P0.02Zn0.97O thin films began to increase at an oxygen partial pressure of 200 mTorr, suggesting a transition from n- to p-type behavior. Depth profiles obtained by secondary ion mass spectroscopy showed that more P was dissolved and more Zn vacancies were formed in the Al0.01P0.02Zn0.97O thin films as the oxygen partial pressure was increased, indicating favorable conditions for hole generation.

AB - The effect of oxygen partial pressure was investigated on the electrical properties of P0-02Zn0-98O, Al0.01P0.02Zn0.97O, and Ga0.01P0.02Zn0.97O thin films grown by pulsed laser deposition. For the P0.02Zn0.98O and Ga0.01P0.02Zn0.97O thin films, the carrier concentration decreased continuously with increasing oxygen partial pressure, which signifies that within the oxygen partial pressure range studied here, the film has n-type electrical characteristics. On the other hand, the carrier concentration in the Al0.01P0.02Zn0.97O thin films began to increase at an oxygen partial pressure of 200 mTorr, suggesting a transition from n- to p-type behavior. Depth profiles obtained by secondary ion mass spectroscopy showed that more P was dissolved and more Zn vacancies were formed in the Al0.01P0.02Zn0.97O thin films as the oxygen partial pressure was increased, indicating favorable conditions for hole generation.

KW - Co-doping

KW - N-type

KW - P-type

KW - PLD

KW - Thin film

KW - ZnO

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DO - 10.1166/jno.2015.1780

M3 - Article

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VL - 10

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JO - Journal of Nanoelectronics and Optoelectronics

JF - Journal of Nanoelectronics and Optoelectronics

IS - 4

ER -

Structural and electrical properties of (Al or Ga) and P co-doped ZnO thin films prepared by pulsed laser deposition

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