Structural and magnetic properties of ZnMnTe semiconductor

S. W. Han; H. S. Kang; B. Z. Jiang; S. Y. Seo; H. W. Park; H. C. Ri

doi:10.1016/j.jmmm.2006.10.788

Structural and magnetic properties of ZnMnTe semiconductor

S. W. Han, H. S. Kang, B. Z. Jiang, S. Y. Seo, H. W. Park, H. C. Ri

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The local structural properties of Zn_0.8 Mn_0.2 Te (ZMT) semiconductors were investigated by using extended X-ray absorption fine structure (EXAFS) measurements at Te, Zn, and Mn K-edges. The ZMT crystals were fabricated by an advanced vertical Bridgeman method. The EXAFS measurements revealed that the ZMT crystals have a well-ordered zinc-blende structure, and that manganese atoms were exactly substituted for the zinc atoms. The DC magnetization measurements of the Zn_0.8 Mn_0.2 Te crystals in the temperature range of 10-300 K showed that the crystals were paramagnetic. This implied that there was no natural charge mediating any ferromagnetism in the crystals.

Original language	English
Pages (from-to)	2114-2116
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.788
State	Published - Mar 2007

Keywords

Dilute magnetic semiconductor
EXAFS
Magnetization
Structure
ZnMnTe

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10.1016/j.jmmm.2006.10.788

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title = "Structural and magnetic properties of ZnMnTe semiconductor",

abstract = "The local structural properties of Zn0.8 Mn0.2 Te (ZMT) semiconductors were investigated by using extended X-ray absorption fine structure (EXAFS) measurements at Te, Zn, and Mn K-edges. The ZMT crystals were fabricated by an advanced vertical Bridgeman method. The EXAFS measurements revealed that the ZMT crystals have a well-ordered zinc-blende structure, and that manganese atoms were exactly substituted for the zinc atoms. The DC magnetization measurements of the Zn0.8 Mn0.2 Te crystals in the temperature range of 10-300 K showed that the crystals were paramagnetic. This implied that there was no natural charge mediating any ferromagnetism in the crystals.",

keywords = "Dilute magnetic semiconductor, EXAFS, Magnetization, Structure, ZnMnTe",

author = "Han, {S. W.} and Kang, {H. S.} and Jiang, {B. Z.} and Seo, {S. Y.} and Park, {H. W.} and Ri, {H. C.}",

year = "2007",

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language = "English",

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TY - JOUR

T1 - Structural and magnetic properties of ZnMnTe semiconductor

AU - Han, S. W.

AU - Kang, H. S.

AU - Jiang, B. Z.

AU - Seo, S. Y.

AU - Park, H. W.

AU - Ri, H. C.

PY - 2007/3

Y1 - 2007/3

N2 - The local structural properties of Zn0.8 Mn0.2 Te (ZMT) semiconductors were investigated by using extended X-ray absorption fine structure (EXAFS) measurements at Te, Zn, and Mn K-edges. The ZMT crystals were fabricated by an advanced vertical Bridgeman method. The EXAFS measurements revealed that the ZMT crystals have a well-ordered zinc-blende structure, and that manganese atoms were exactly substituted for the zinc atoms. The DC magnetization measurements of the Zn0.8 Mn0.2 Te crystals in the temperature range of 10-300 K showed that the crystals were paramagnetic. This implied that there was no natural charge mediating any ferromagnetism in the crystals.

AB - The local structural properties of Zn0.8 Mn0.2 Te (ZMT) semiconductors were investigated by using extended X-ray absorption fine structure (EXAFS) measurements at Te, Zn, and Mn K-edges. The ZMT crystals were fabricated by an advanced vertical Bridgeman method. The EXAFS measurements revealed that the ZMT crystals have a well-ordered zinc-blende structure, and that manganese atoms were exactly substituted for the zinc atoms. The DC magnetization measurements of the Zn0.8 Mn0.2 Te crystals in the temperature range of 10-300 K showed that the crystals were paramagnetic. This implied that there was no natural charge mediating any ferromagnetism in the crystals.

KW - Dilute magnetic semiconductor

KW - EXAFS

KW - Magnetization

KW - Structure

KW - ZnMnTe

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U2 - 10.1016/j.jmmm.2006.10.788

DO - 10.1016/j.jmmm.2006.10.788

M3 - Article

AN - SCOPUS:33847656569

SN - 0304-8853

VL - 310

SP - 2114

EP - 2116

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

ER -

Structural and magnetic properties of ZnMnTe semiconductor

Abstract

Keywords

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