Structural and magnetic properties of ZnMnTe semiconductor

S. W. Han; H. S. Kang; B. Z. Jiang; S. Y. Seo; H. W. Park; H. C. Ri

doi:10.1016/j.jmmm.2006.10.788

Structural and magnetic properties of ZnMnTe semiconductor

S. W. Han
, H. S. Kang
, B. Z. Jiang
, S. Y. Seo
, H. W. Park
, H. C. Ri

Department of Physics

Institute of Science Education
Pohang University of Science and Technology
Kyungpook National University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The local structural properties of Zn_0.8 Mn_0.2 Te (ZMT) semiconductors were investigated by using extended X-ray absorption fine structure (EXAFS) measurements at Te, Zn, and Mn K-edges. The ZMT crystals were fabricated by an advanced vertical Bridgeman method. The EXAFS measurements revealed that the ZMT crystals have a well-ordered zinc-blende structure, and that manganese atoms were exactly substituted for the zinc atoms. The DC magnetization measurements of the Zn_0.8 Mn_0.2 Te crystals in the temperature range of 10-300 K showed that the crystals were paramagnetic. This implied that there was no natural charge mediating any ferromagnetism in the crystals.

Original language	English
Pages (from-to)	2114-2116
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.788
State	Published - Mar 2007

Keywords

Dilute magnetic semiconductor
EXAFS
Magnetization
Structure
ZnMnTe

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10.1016/j.jmmm.2006.10.788

Cite this

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title = "Structural and magnetic properties of ZnMnTe semiconductor",

abstract = "The local structural properties of Zn0.8 Mn0.2 Te (ZMT) semiconductors were investigated by using extended X-ray absorption fine structure (EXAFS) measurements at Te, Zn, and Mn K-edges. The ZMT crystals were fabricated by an advanced vertical Bridgeman method. The EXAFS measurements revealed that the ZMT crystals have a well-ordered zinc-blende structure, and that manganese atoms were exactly substituted for the zinc atoms. The DC magnetization measurements of the Zn0.8 Mn0.2 Te crystals in the temperature range of 10-300 K showed that the crystals were paramagnetic. This implied that there was no natural charge mediating any ferromagnetism in the crystals.",

keywords = "Dilute magnetic semiconductor, EXAFS, Magnetization, Structure, ZnMnTe",

author = "Han, \{S. W.\} and Kang, \{H. S.\} and Jiang, \{B. Z.\} and Seo, \{S. Y.\} and Park, \{H. W.\} and Ri, \{H. C.\}",

year = "2007",

month = mar,

doi = "10.1016/j.jmmm.2006.10.788",

language = "English",

volume = "310",

pages = "2114--2116",

journal = "Journal of Magnetism and Magnetic Materials",

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publisher = "Elsevier B.V.",

number = "2 SUPPL. PART 3",

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TY - JOUR

T1 - Structural and magnetic properties of ZnMnTe semiconductor

AU - Han, S. W.

AU - Kang, H. S.

AU - Jiang, B. Z.

AU - Seo, S. Y.

AU - Park, H. W.

AU - Ri, H. C.

PY - 2007/3

Y1 - 2007/3

N2 - The local structural properties of Zn0.8 Mn0.2 Te (ZMT) semiconductors were investigated by using extended X-ray absorption fine structure (EXAFS) measurements at Te, Zn, and Mn K-edges. The ZMT crystals were fabricated by an advanced vertical Bridgeman method. The EXAFS measurements revealed that the ZMT crystals have a well-ordered zinc-blende structure, and that manganese atoms were exactly substituted for the zinc atoms. The DC magnetization measurements of the Zn0.8 Mn0.2 Te crystals in the temperature range of 10-300 K showed that the crystals were paramagnetic. This implied that there was no natural charge mediating any ferromagnetism in the crystals.

AB - The local structural properties of Zn0.8 Mn0.2 Te (ZMT) semiconductors were investigated by using extended X-ray absorption fine structure (EXAFS) measurements at Te, Zn, and Mn K-edges. The ZMT crystals were fabricated by an advanced vertical Bridgeman method. The EXAFS measurements revealed that the ZMT crystals have a well-ordered zinc-blende structure, and that manganese atoms were exactly substituted for the zinc atoms. The DC magnetization measurements of the Zn0.8 Mn0.2 Te crystals in the temperature range of 10-300 K showed that the crystals were paramagnetic. This implied that there was no natural charge mediating any ferromagnetism in the crystals.

KW - Dilute magnetic semiconductor

KW - EXAFS

KW - Magnetization

KW - Structure

KW - ZnMnTe

UR - https://www.scopus.com/pages/publications/33847656569

U2 - 10.1016/j.jmmm.2006.10.788

DO - 10.1016/j.jmmm.2006.10.788

M3 - Article

AN - SCOPUS:33847656569

SN - 0304-8853

VL - 310

SP - 2114

EP - 2116

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

ER -

Structural and magnetic properties of ZnMnTe semiconductor

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Keywords

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