Abstract
The structural evolution during heteroepitaxial growth of ZnO/sapphire(001) by radio-frequency magnetron sputtering has been studied using real-time synchrotron x-ray scattering. The two-dimensional (2D) ZnO(002) layers grown in the initial stage are highly strained and well aligned to the substrate having a mosaic distribution of 0.01° full width at half maximum (FWHM), in sharp contrast to the reported transition 2D layers grown by molecular-beam epitaxy. With increasing film thickness, the lattice strain is relieved and the poorly aligned (1.25° FWHM) three-dimensional (3D) islands are nucleated on the 2D layers. We attribute the 2D-3D transition to the release of the strain energy stored in the film due to the film/substrate lattice mismatch.
Original language | English |
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Pages (from-to) | 349-351 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 77 |
Issue number | 3 |
DOIs | |
State | Published - 17 Jul 2000 |