Structural stability of (Ba, Sr)RuO3 electrodes on hydrogen annealing and effect of interfacial layers in (Ba,Sr)TiO3 thin films

Eun Suck Choi; Sang Shik Park; Soon Gil Yoon

doi:10.1080/713718271

Structural stability of (Ba, Sr)RuO₃ electrodes on hydrogen annealing and effect of interfacial layers in (Ba,Sr)TiO₃ thin films

Eun Suck Choi, Sang Shik Park, Soon Gil Yoon

Chungnam National University

Research output: Contribution to journal › Review article › peer-review

2 Scopus citations

Abstract

(Ba, Sr)RuO₃(BSR) electrodes were deposited on n-type Si (100) substrates by liquid-delivery metalorganic chemical vapor deposition (LDMOCVD) and their stability in a hydrogen ambient was investigated. BSR films showed the structural and morphological stability when annealed in hydrogen forming gas (4 % H₂+96% balance N₂) temperatures of up to 500□. The abrupt increase of resistivity with increasing hydrogen annealing temperature can be attributed to oxygen loss in BSR films without phase change and was completely recovered by annealing at 700□ in an O₂ ambient. The dielectric constant of the Pt/BSR/BST/Pt structures increased with increasing BSR interfacial layers. The dielectric constant of a BSR/BST/Pt capacitor with a 35 nm thick BST without top Pt electrode showed about 425.

Original language	English
Pages (from-to)	31-40
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	47
DOIs	https://doi.org/10.1080/713718271
State	Published - 2002

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@article{a22c23b2ba4245fc804403411eac0f23,

title = "Structural stability of (Ba, Sr)RuO3 electrodes on hydrogen annealing and effect of interfacial layers in (Ba,Sr)TiO3 thin films",

abstract = "(Ba, Sr)RuO3(BSR) electrodes were deposited on n-type Si (100) substrates by liquid-delivery metalorganic chemical vapor deposition (LDMOCVD) and their stability in a hydrogen ambient was investigated. BSR films showed the structural and morphological stability when annealed in hydrogen forming gas (4 % H2+96% balance N2) temperatures of up to 500□. The abrupt increase of resistivity with increasing hydrogen annealing temperature can be attributed to oxygen loss in BSR films without phase change and was completely recovered by annealing at 700□ in an O2 ambient. The dielectric constant of the Pt/BSR/BST/Pt structures increased with increasing BSR interfacial layers. The dielectric constant of a BSR/BST/Pt capacitor with a 35 nm thick BST without top Pt electrode showed about 425.",

author = "Choi, {Eun Suck} and Park, {Sang Shik} and Yoon, {Soon Gil}",

year = "2002",

doi = "10.1080/713718271",

language = "English",

volume = "47",

pages = "31--40",

journal = "Integrated Ferroelectrics",

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T1 - Structural stability of (Ba, Sr)RuO3 electrodes on hydrogen annealing and effect of interfacial layers in (Ba,Sr)TiO3 thin films

AU - Choi, Eun Suck

AU - Park, Sang Shik

AU - Yoon, Soon Gil

PY - 2002

Y1 - 2002

N2 - (Ba, Sr)RuO3(BSR) electrodes were deposited on n-type Si (100) substrates by liquid-delivery metalorganic chemical vapor deposition (LDMOCVD) and their stability in a hydrogen ambient was investigated. BSR films showed the structural and morphological stability when annealed in hydrogen forming gas (4 % H2+96% balance N2) temperatures of up to 500□. The abrupt increase of resistivity with increasing hydrogen annealing temperature can be attributed to oxygen loss in BSR films without phase change and was completely recovered by annealing at 700□ in an O2 ambient. The dielectric constant of the Pt/BSR/BST/Pt structures increased with increasing BSR interfacial layers. The dielectric constant of a BSR/BST/Pt capacitor with a 35 nm thick BST without top Pt electrode showed about 425.

AB - (Ba, Sr)RuO3(BSR) electrodes were deposited on n-type Si (100) substrates by liquid-delivery metalorganic chemical vapor deposition (LDMOCVD) and their stability in a hydrogen ambient was investigated. BSR films showed the structural and morphological stability when annealed in hydrogen forming gas (4 % H2+96% balance N2) temperatures of up to 500□. The abrupt increase of resistivity with increasing hydrogen annealing temperature can be attributed to oxygen loss in BSR films without phase change and was completely recovered by annealing at 700□ in an O2 ambient. The dielectric constant of the Pt/BSR/BST/Pt structures increased with increasing BSR interfacial layers. The dielectric constant of a BSR/BST/Pt capacitor with a 35 nm thick BST without top Pt electrode showed about 425.

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U2 - 10.1080/713718271

DO - 10.1080/713718271

M3 - Review article

AN - SCOPUS:9544258612

SN - 1058-4587

VL - 47

SP - 31

EP - 40

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

ER -

Structural stability of (Ba, Sr)RuO₃ electrodes on hydrogen annealing and effect of interfacial layers in (Ba,Sr)TiO₃ thin films

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