Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory

Daeseok Lee; Jaesung Park; Jaehyuk Park; Jiyong Woo; Euijun Cha; Sangheon Lee; Kibong Moon; Jeonghwan Song; Yunmo Koo; Hyunsang Hwang

doi:10.1002/adma.201403675

Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory

Daeseok Lee
, Jaesung Park
, Jaehyuk Park
, Jiyong Woo
, Euijun Cha
, Sangheon Lee
, Kibong Moon
, Jeonghwan Song
, Yunmo Koo
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

(Graph Presented). A 3D highdensity switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which can be used to realize highdensity ReRAM applications.

Original language	English
Pages (from-to)	59-64
Number of pages	6
Journal	Advanced Materials
Volume	27
Issue number	1
DOIs	https://doi.org/10.1002/adma.201403675
State	Published - 6 Nov 2015

Keywords

3D structure
Cross-point array
Metal-insulator transition
Non-volatilememory
Titanium oxide
Two-terminal switch

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10.1002/adma.201403675

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title = "Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory",

abstract = "(Graph Presented). A 3D highdensity switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which can be used to realize highdensity ReRAM applications.",

keywords = "3D structure, Cross-point array, Metal-insulator transition, Non-volatilememory, Titanium oxide, Two-terminal switch",

author = "Daeseok Lee and Jaesung Park and Jaehyuk Park and Jiyong Woo and Euijun Cha and Sangheon Lee and Kibong Moon and Jeonghwan Song and Yunmo Koo and Hyunsang Hwang",

note = "Publisher Copyright: {\textcopyright} 2014 WILEY-VCH Verlag GmbH \& Co. KGaA.",

year = "2015",

month = nov,

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doi = "10.1002/adma.201403675",

language = "English",

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T1 - Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory

AU - Lee, Daeseok

AU - Park, Jaesung

AU - Park, Jaehyuk

AU - Woo, Jiyong

AU - Cha, Euijun

AU - Lee, Sangheon

AU - Moon, Kibong

AU - Song, Jeonghwan

AU - Koo, Yunmo

AU - Hwang, Hyunsang

PY - 2015/11/6

Y1 - 2015/11/6

N2 - (Graph Presented). A 3D highdensity switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which can be used to realize highdensity ReRAM applications.

AB - (Graph Presented). A 3D highdensity switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which can be used to realize highdensity ReRAM applications.

KW - 3D structure

KW - Cross-point array

KW - Metal-insulator transition

KW - Non-volatilememory

KW - Titanium oxide

KW - Two-terminal switch

UR - https://www.scopus.com/pages/publications/84920135967

U2 - 10.1002/adma.201403675

DO - 10.1002/adma.201403675

M3 - Article

AN - SCOPUS:84920135967

SN - 0935-9648

VL - 27

SP - 59

EP - 64

JO - Advanced Materials

JF - Advanced Materials

IS - 1

ER -

Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory

Abstract

Keywords

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