Structure and NH3 sensing properties of SnO thin film deposited by RF magnetron sputtering

Vu Xuan Hien; Joon Hyung Lee; Jeong Joo Kim; Young Woo Heo

doi:10.1016/j.snb.2013.12.086

Structure and NH₃ sensing properties of SnO thin film deposited by RF magnetron sputtering

Vu Xuan Hien, Joon Hyung Lee, Jeong Joo Kim, Young Woo Heo

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

SnO thin films, 100 nm in thickness, were deposited on glass substrates by RF magnetron sputtering. A structure of SnO₂/SnO, where few nanometers of SnO₂ were determined on the SnO thin film by X-ray photoelectron spectroscopy. In addition, XPS depth profile analysis of the pristine and heat treated thin films was introduced. The electrical behavior of the as-sputtered films during heat treatment in air and nitrogen was recorded to investigate the working conditions for the SnO sensor. Subsequently, the NH₃ sensing properties of the SnO sensor at operating temperatures of 50-200 C were examined, in which the p-type semiconducting sensing properties of the thin film were noted. The sensor shows good sensitivity and repeatability to NH₃ vapor. Finally, a sensing mechanism was proposed and discussed.

Original language	English
Pages (from-to)	134-141
Number of pages	8
Journal	Sensors and Actuators, B: Chemical
Volume	194
DOIs	https://doi.org/10.1016/j.snb.2013.12.086
State	Published - Apr 2014

Keywords

Gas sensor
p-Type semiconductor
SnO thin film
Sputtering

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10.1016/j.snb.2013.12.086

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title = "Structure and NH3 sensing properties of SnO thin film deposited by RF magnetron sputtering",

abstract = "SnO thin films, 100 nm in thickness, were deposited on glass substrates by RF magnetron sputtering. A structure of SnO2/SnO, where few nanometers of SnO2 were determined on the SnO thin film by X-ray photoelectron spectroscopy. In addition, XPS depth profile analysis of the pristine and heat treated thin films was introduced. The electrical behavior of the as-sputtered films during heat treatment in air and nitrogen was recorded to investigate the working conditions for the SnO sensor. Subsequently, the NH3 sensing properties of the SnO sensor at operating temperatures of 50-200 C were examined, in which the p-type semiconducting sensing properties of the thin film were noted. The sensor shows good sensitivity and repeatability to NH3 vapor. Finally, a sensing mechanism was proposed and discussed.",

keywords = "Gas sensor, p-Type semiconductor, SnO thin film, Sputtering",

author = "Hien, {Vu Xuan} and Lee, {Joon Hyung} and Kim, {Jeong Joo} and Heo, {Young Woo}",

year = "2014",

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doi = "10.1016/j.snb.2013.12.086",

language = "English",

volume = "194",

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journal = "Sensors and Actuators, B: Chemical",

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T1 - Structure and NH3 sensing properties of SnO thin film deposited by RF magnetron sputtering

AU - Hien, Vu Xuan

AU - Lee, Joon Hyung

AU - Kim, Jeong Joo

AU - Heo, Young Woo

PY - 2014/4

Y1 - 2014/4

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AB - SnO thin films, 100 nm in thickness, were deposited on glass substrates by RF magnetron sputtering. A structure of SnO2/SnO, where few nanometers of SnO2 were determined on the SnO thin film by X-ray photoelectron spectroscopy. In addition, XPS depth profile analysis of the pristine and heat treated thin films was introduced. The electrical behavior of the as-sputtered films during heat treatment in air and nitrogen was recorded to investigate the working conditions for the SnO sensor. Subsequently, the NH3 sensing properties of the SnO sensor at operating temperatures of 50-200 C were examined, in which the p-type semiconducting sensing properties of the thin film were noted. The sensor shows good sensitivity and repeatability to NH3 vapor. Finally, a sensing mechanism was proposed and discussed.

KW - Gas sensor

KW - p-Type semiconductor

KW - SnO thin film

KW - Sputtering

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JO - Sensors and Actuators, B: Chemical

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ER -

Structure and NH₃ sensing properties of SnO thin film deposited by RF magnetron sputtering

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