Study of radiation effects on cream electronics

Y. Amare, L. Derome, C. Ebongue, M. Gupta, A. Haque, H. J. Kim, K. Kwashnak, M. H. Lee, L. Lutz, A. Malinin, A. Page, E. S. Seo, D. Zuckerman

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

The Cosmic Ray Energetics and Mass (CREAM) instrument is currently being reconfigured for the International Space Station (ISS). The space radiation environment originating from several sources, such as galactic cosmic rays, energetic solar particles from the Sun, and trapped particles in the radiation belts, create special design challenges. Environments with high levels of ionizing radiation can cause Single Event Effects (SEEs), such as bit flips, current spikes, and other malfunctions in electronic components. SEEs in electronic components have been studied using heavy ion beams, 15 MeV/amu He, Ne, Ar, Cu, Xe, and Au nuclei, in the range of Linear Energy Transfer (LET) from 0.121 to 85.4 MeV-cm2/mg. Single Event Latchup (SEL) and Single Event Transient (SET) rates were measured. Results from radiation tests performed at the Texas A&M University cyclotron beam facility and projections to the electronics’ performance aboard the ISS are presented.

Original languageEnglish
Title of host publicationProceedings of the 33rd International Cosmic Rays Conference, ICRC 2013
PublisherSociedade Brasileira de Fisica
ISBN (Electronic)9788589064293
StatePublished - 2013
Event33rd International Cosmic Rays Conference, ICRC 2013 - Rio de Janeiro, Brazil
Duration: 2 Jul 20139 Jul 2013

Publication series

NameProceedings of the 33rd International Cosmic Rays Conference, ICRC 2013
Volume2013-October

Conference

Conference33rd International Cosmic Rays Conference, ICRC 2013
Country/TerritoryBrazil
CityRio de Janeiro
Period2/07/139/07/13

Keywords

  • CREAM
  • ISS
  • Single event effect

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