Study of the growth of biaxially textured CeO2 films during ion-beam-assisted deposition

Chang Su Kim; Sung Jin Jo; Soon Moon Jeong; Woo Jin Kim; Hong Koo Baik; Se Jong Lee; Kie Moon Song

doi:10.1088/0953-2048/18/3/021

Study of the growth of biaxially textured CeO₂ films during ion-beam-assisted deposition

Chang Su Kim, Sung Jin Jo, Soon Moon Jeong, Woo Jin Kim, Hong Koo Baik, Se Jong Lee, Kie Moon Song

School of Energy Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Biaxially textured CeO₂ films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ -scan and φ-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO₂ films have been successfully grown on Hastelloy C276.

Original language	English
Pages (from-to)	330-333
Number of pages	4
Journal	Superconductor Science and Technology
Volume	18
Issue number	3
DOIs	https://doi.org/10.1088/0953-2048/18/3/021
State	Published - Mar 2005

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title = "Study of the growth of biaxially textured CeO2 films during ion-beam-assisted deposition",

abstract = "Biaxially textured CeO2 films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ -scan and φ-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.",

author = "Kim, {Chang Su} and Jo, {Sung Jin} and Jeong, {Soon Moon} and Kim, {Woo Jin} and Baik, {Hong Koo} and Lee, {Se Jong} and Song, {Kie Moon}",

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T1 - Study of the growth of biaxially textured CeO2 films during ion-beam-assisted deposition

AU - Kim, Chang Su

AU - Jo, Sung Jin

AU - Jeong, Soon Moon

AU - Kim, Woo Jin

AU - Baik, Hong Koo

AU - Lee, Se Jong

AU - Song, Kie Moon

PY - 2005/3

Y1 - 2005/3

N2 - Biaxially textured CeO2 films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ -scan and φ-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.

AB - Biaxially textured CeO2 films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ -scan and φ-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.

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U2 - 10.1088/0953-2048/18/3/021

DO - 10.1088/0953-2048/18/3/021

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SN - 0953-2048

VL - 18

SP - 330

EP - 333

JO - Superconductor Science and Technology

JF - Superconductor Science and Technology

IS - 3

ER -

Study of the growth of biaxially textured CeO₂ films during ion-beam-assisted deposition

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