Study on scintillation characteristics of BGSO single crystals

Hua Jiang; Gul Rooh; H. J. Kim; J. M. Lee; Y. J. Lee; Sunghwan Kim

doi:10.1109/TNS.2013.2283878

Study on scintillation characteristics of BGSO single crystals

Hua Jiang, Gul Rooh, H. J. Kim, J. M. Lee, Y. J. Lee, Sunghwan Kim

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

This paper presents a report on the growth and scintillation characterization of Bi₄(Ge_1-xSi_x) ₃O₁₂ (BGSO) single crystals with x =0.1 , 0.2, 0.3, 0.5, 0.7, 0.8, and 0.9. The scintillator is grown by using the Czochralski pulling method. By employing a suitable rotation and pulling rates, high quality BGSO single crystals have been grown. Photoluminescence and X-rays induced emission spectra show a broad emission band in the wavelength range from 350 to 700 nm. Light yield and decay time under γ-ray excitation are studied for various values of x in BGSO. Light yield decreases with the increasing value of x. For all the grown samples, the decay time spectrum contained three components at room temperature. This report also includes the measurement of the temperature dependence of the scintillation light yield of BGSO crystal with _x =0.1. A change in the light yield is observed between 100 and 300 K. The light yield of BGSO at 100 K is observed eight times higher than that at 300 K.

Original language	English
Article number	6678773
Pages (from-to)	323-327
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	61
Issue number	1
DOIs	https://doi.org/10.1109/TNS.2013.2283878
State	Published - Feb 2014

Keywords

Czochralksi method
Decay time
Energy resolution
Light yield
Low temperature

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title = "Study on scintillation characteristics of BGSO single crystals",

abstract = "This paper presents a report on the growth and scintillation characterization of Bi4(Ge1-xSix) 3O12 (BGSO) single crystals with x =0.1 , 0.2, 0.3, 0.5, 0.7, 0.8, and 0.9. The scintillator is grown by using the Czochralski pulling method. By employing a suitable rotation and pulling rates, high quality BGSO single crystals have been grown. Photoluminescence and X-rays induced emission spectra show a broad emission band in the wavelength range from 350 to 700 nm. Light yield and decay time under γ-ray excitation are studied for various values of x in BGSO. Light yield decreases with the increasing value of x. For all the grown samples, the decay time spectrum contained three components at room temperature. This report also includes the measurement of the temperature dependence of the scintillation light yield of BGSO crystal with x =0.1. A change in the light yield is observed between 100 and 300 K. The light yield of BGSO at 100 K is observed eight times higher than that at 300 K.",

keywords = "Czochralksi method, Decay time, Energy resolution, Light yield, Low temperature",

author = "Hua Jiang and Gul Rooh and Kim, {H. J.} and Lee, {J. M.} and Lee, {Y. J.} and Sunghwan Kim",

year = "2014",

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doi = "10.1109/TNS.2013.2283878",

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volume = "61",

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journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

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AU - Jiang, Hua

AU - Rooh, Gul

AU - Kim, H. J.

AU - Lee, J. M.

AU - Lee, Y. J.

AU - Kim, Sunghwan

PY - 2014/2

Y1 - 2014/2

N2 - This paper presents a report on the growth and scintillation characterization of Bi4(Ge1-xSix) 3O12 (BGSO) single crystals with x =0.1 , 0.2, 0.3, 0.5, 0.7, 0.8, and 0.9. The scintillator is grown by using the Czochralski pulling method. By employing a suitable rotation and pulling rates, high quality BGSO single crystals have been grown. Photoluminescence and X-rays induced emission spectra show a broad emission band in the wavelength range from 350 to 700 nm. Light yield and decay time under γ-ray excitation are studied for various values of x in BGSO. Light yield decreases with the increasing value of x. For all the grown samples, the decay time spectrum contained three components at room temperature. This report also includes the measurement of the temperature dependence of the scintillation light yield of BGSO crystal with x =0.1. A change in the light yield is observed between 100 and 300 K. The light yield of BGSO at 100 K is observed eight times higher than that at 300 K.

AB - This paper presents a report on the growth and scintillation characterization of Bi4(Ge1-xSix) 3O12 (BGSO) single crystals with x =0.1 , 0.2, 0.3, 0.5, 0.7, 0.8, and 0.9. The scintillator is grown by using the Czochralski pulling method. By employing a suitable rotation and pulling rates, high quality BGSO single crystals have been grown. Photoluminescence and X-rays induced emission spectra show a broad emission band in the wavelength range from 350 to 700 nm. Light yield and decay time under γ-ray excitation are studied for various values of x in BGSO. Light yield decreases with the increasing value of x. For all the grown samples, the decay time spectrum contained three components at room temperature. This report also includes the measurement of the temperature dependence of the scintillation light yield of BGSO crystal with x =0.1. A change in the light yield is observed between 100 and 300 K. The light yield of BGSO at 100 K is observed eight times higher than that at 300 K.

KW - Czochralksi method

KW - Decay time

KW - Energy resolution

KW - Light yield

KW - Low temperature

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Study on scintillation characteristics of BGSO single crystals

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