Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping

Seung Woo Do; Byung Ho Song; Ho Jung; Seong Ho Kong; Jae Geun Oh; Jin Ku Lee; Min Ae Ju; Seung Joon Jeon; Ja Chun Ku; Yong Hyun Lee

doi:10.1557/proc-1070-e03-06

Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping

Seung Woo Do
, Byung Ho Song
, Ho Jung
, Seong Ho Kong
, Jae Geun Oh
, Jin Ku Lee
, Min Ae Ju
, Seung Joon Jeon
, Ja Chun Ku
, Yong Hyun Lee

School of Electronics Engineering

Kyungpook National University
SK Corporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Plasma doping (PLAD) process utilizing PH₃ plasma to fabricate n-type junction with supplied bias of -1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n⁺ junctions are formed with surface doping concentration of 10²¹atoms/cm³. The junction depth increases in proportion to the O₂ gas flow when the N₂ flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n⁺ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/ are feasible.

Original language	English
Title of host publication	Doping Engineering for Front-End Processing
Publisher	Materials Research Society
Pages	123-128
Number of pages	6
ISBN (Print)	9781605110400
DOIs	https://doi.org/10.1557/proc-1070-e03-06
State	Published - 2008
Event	2008 MRS Spring Meeting - San Francisco, CA, United States Duration: 25 Mar 2008 → 27 Mar 2008

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1070
ISSN (Print)	0272-9172

Conference

Conference	2008 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	25/03/08 → 27/03/08

Access to Document

10.1557/proc-1070-e03-06

Cite this

Do, S. W., Song, B. H., Jung, H., Kong, S. H., Oh, J. G., Lee, J. K., Ju, M. A., Jeon, S. J., Ku, J. C., & Lee, Y. H. (2008). Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping. In Doping Engineering for Front-End Processing (pp. 123-128). (Materials Research Society Symposium Proceedings; Vol. 1070). Materials Research Society. https://doi.org/10.1557/proc-1070-e03-06

@inproceedings{a19e0b85e024475ea8a4738ce5b1f845,

title = "Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping",

abstract = "Plasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of -1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/ are feasible.",

author = "Do, \{Seung Woo\} and Song, \{Byung Ho\} and Ho Jung and Kong, \{Seong Ho\} and Oh, \{Jae Geun\} and Lee, \{Jin Ku\} and Ju, \{Min Ae\} and Jeon, \{Seung Joon\} and Ku, \{Ja Chun\} and Lee, \{Yong Hyun\}",

year = "2008",

doi = "10.1557/proc-1070-e03-06",

language = "English",

isbn = "9781605110400",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "123--128",

booktitle = "Doping Engineering for Front-End Processing",

note = "2008 MRS Spring Meeting ; Conference date: 25-03-2008 Through 27-03-2008",

}

Do, SW, Song, BH, Jung, H, Kong, SH, Oh, JG, Lee, JK, Ju, MA, Jeon, SJ, Ku, JC & Lee, YH 2008, Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping. in Doping Engineering for Front-End Processing. Materials Research Society Symposium Proceedings, vol. 1070, Materials Research Society, pp. 123-128, 2008 MRS Spring Meeting, San Francisco, CA, United States, 25/03/08. https://doi.org/10.1557/proc-1070-e03-06

Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping. / Do, Seung Woo; Song, Byung Ho; Jung, Ho et al.
Doping Engineering for Front-End Processing. Materials Research Society, 2008. p. 123-128 (Materials Research Society Symposium Proceedings; Vol. 1070).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping

AU - Do, Seung Woo

AU - Song, Byung Ho

AU - Jung, Ho

AU - Kong, Seong Ho

AU - Oh, Jae Geun

AU - Lee, Jin Ku

AU - Ju, Min Ae

AU - Jeon, Seung Joon

AU - Ku, Ja Chun

AU - Lee, Yong Hyun

PY - 2008

Y1 - 2008

N2 - Plasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of -1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/ are feasible.

AB - Plasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of -1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/ are feasible.

UR - https://www.scopus.com/pages/publications/62949215608

U2 - 10.1557/proc-1070-e03-06

DO - 10.1557/proc-1070-e03-06

M3 - Conference contribution

AN - SCOPUS:62949215608

SN - 9781605110400

T3 - Materials Research Society Symposium Proceedings

SP - 123

EP - 128

BT - Doping Engineering for Front-End Processing

PB - Materials Research Society

T2 - 2008 MRS Spring Meeting

Y2 - 25 March 2008 through 27 March 2008

ER -

Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping

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