Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping

Seung Woo Do; Byung Ho Song; Ho Jung; Seong Ho Kong; Jae Geun Oh; Jin Ku Lee; Min Ae Ju; Seung Joon Jeon; Ja Chun Ku; Yong Hyun Lee

doi:10.1557/proc-1070-e03-06

Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping

Seung Woo Do, Byung Ho Song, Ho Jung, Seong Ho Kong, Jae Geun Oh, Jin Ku Lee, Min Ae Ju, Seung Joon Jeon, Ja Chun Ku, Yong Hyun Lee

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Plasma doping (PLAD) process utilizing PH₃ plasma to fabricate n-type junction with supplied bias of -1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n⁺ junctions are formed with surface doping concentration of 10²¹atoms/cm³. The junction depth increases in proportion to the O₂ gas flow when the N₂ flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n⁺ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/ are feasible.

Original language	English
Title of host publication	Doping Engineering for Front-End Processing
Publisher	Materials Research Society
Pages	123-128
Number of pages	6
ISBN (Print)	9781605110400
DOIs	https://doi.org/10.1557/proc-1070-e03-06
State	Published - 2008
Event	2008 MRS Spring Meeting - San Francisco, CA, United States Duration: 25 Mar 2008 → 27 Mar 2008

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1070
ISSN (Print)	0272-9172

Conference

Conference	2008 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	25/03/08 → 27/03/08

Access to Document

10.1557/proc-1070-e03-06

Cite this

Do, S. W., Song, B. H., Jung, H., Kong, S. H., Oh, J. G., Lee, J. K., Ju, M. A., Jeon, S. J., Ku, J. C., & Lee, Y. H. (2008). Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping. In Doping Engineering for Front-End Processing (pp. 123-128). (Materials Research Society Symposium Proceedings; Vol. 1070). Materials Research Society. https://doi.org/10.1557/proc-1070-e03-06

@inproceedings{a19e0b85e024475ea8a4738ce5b1f845,

title = "Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping",

abstract = "Plasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of -1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/ are feasible.",

author = "Do, \{Seung Woo\} and Song, \{Byung Ho\} and Ho Jung and Kong, \{Seong Ho\} and Oh, \{Jae Geun\} and Lee, \{Jin Ku\} and Ju, \{Min Ae\} and Jeon, \{Seung Joon\} and Ku, \{Ja Chun\} and Lee, \{Yong Hyun\}",

year = "2008",

doi = "10.1557/proc-1070-e03-06",

language = "English",

isbn = "9781605110400",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "123--128",

booktitle = "Doping Engineering for Front-End Processing",

note = "2008 MRS Spring Meeting ; Conference date: 25-03-2008 Through 27-03-2008",

}

Do, SW, Song, BH, Jung, H, Kong, SH, Oh, JG, Lee, JK, Ju, MA, Jeon, SJ, Ku, JC & Lee, YH 2008, Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping. in Doping Engineering for Front-End Processing. Materials Research Society Symposium Proceedings, vol. 1070, Materials Research Society, pp. 123-128, 2008 MRS Spring Meeting, San Francisco, CA, United States, 25/03/08. https://doi.org/10.1557/proc-1070-e03-06

Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping. / Do, Seung Woo; Song, Byung Ho; Jung, Ho et al.
Doping Engineering for Front-End Processing. Materials Research Society, 2008. p. 123-128 (Materials Research Society Symposium Proceedings; Vol. 1070).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping

AU - Do, Seung Woo

AU - Song, Byung Ho

AU - Jung, Ho

AU - Kong, Seong Ho

AU - Oh, Jae Geun

AU - Lee, Jin Ku

AU - Ju, Min Ae

AU - Jeon, Seung Joon

AU - Ku, Ja Chun

AU - Lee, Yong Hyun

PY - 2008

Y1 - 2008

N2 - Plasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of -1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/ are feasible.

AB - Plasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of -1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/ are feasible.

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U2 - 10.1557/proc-1070-e03-06

DO - 10.1557/proc-1070-e03-06

M3 - Conference contribution

AN - SCOPUS:62949215608

SN - 9781605110400

T3 - Materials Research Society Symposium Proceedings

SP - 123

EP - 128

BT - Doping Engineering for Front-End Processing

PB - Materials Research Society

T2 - 2008 MRS Spring Meeting

Y2 - 25 March 2008 through 27 March 2008

ER -

Study on the effect of RTA ambient to shallow N+/P junction formation using PH3 plasma doping

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