Abstract
Si crystal is a typical non-luminous semiconductor due to indirect band gap of 1.1eV. Herein we report that pyrolitic product of n-butyl polysilyne turns to highly luminous amorphous silicon-like materials (Raman Si-Si band 460cm-1), emitting 460-750nm (1.6-2.7eV). The emitting wavelengths were controlled by the choice of pyrolytic temperature and time of the polysilyne sealed in vacuo. Of particular interest is that i-butyl polysilyne afforded crystalline Si (Raman Si-Si band 510cm-1 typical for crystal Si), when i-butyl polysilyne was treated at 500C in vacuo. These findings are very promising in developing novel highly lumiuous Si-related materials and Si thin film without the use of dangerous SiH4 gas.
| Original language | English |
|---|---|
| Pages | 3001-3002 |
| Number of pages | 2 |
| State | Published - 2006 |
| Event | 55th Society of Polymer Science Japan Symposium on Macromolecules - Toyama, Japan Duration: 20 Sep 2006 → 22 Sep 2006 |
Conference
| Conference | 55th Society of Polymer Science Japan Symposium on Macromolecules |
|---|---|
| Country/Territory | Japan |
| City | Toyama |
| Period | 20/09/06 → 22/09/06 |
Keywords
- Hierarchiral
- Luminescence
- Polysilane
- Quantum effect
- Silicon
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