Superior Characteristics of RuO2/GaN Schottky-Type UV Photodetector

Sang Hoon Shin; Byung Kwon Jung; Jae Hoon Lee; Myoung Bok Lee; Jung Hee Lee; Yong Hyun Lee; Sung Ho Hahm

doi:10.1002/1521-396X(200111)188:1<341::AID-PSSA341>3.0.CO;2-0

Superior Characteristics of RuO₂/GaN Schottky-Type UV Photodetector

Sang Hoon Shin, Byung Kwon Jung, Jae Hoon Lee, Myoung Bok Lee, Jung Hee Lee, Yong Hyun Lee, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A RuO₂/GaN Schottky diode was designed and fabricated for application as a UV photodetector. The fabricated RuO₂/GaN Schottky diode showed a breakdown at over -50 V, plus a leakage current of 9 nA/cm² at -5 V with a good uniformity that was one order of magnitude lower than that of a Pt/GaN Schottky diode under the same epitaxial conditions. The proposed RuO₂/GaN Schottky photodiode also exhibited a UV-visible rejection ratio of 3 × 10⁵ and responsivity of 0.23 A/W at 330 nm.

Original language	English
Pages (from-to)	341-344
Number of pages	4
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200111)188:1<341::AID-PSSA341>3.0.CO;2-0
State	Published - Nov 2001

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@article{ca1f39f055d84223a01bcb45e3789f62,

title = "Superior Characteristics of RuO2/GaN Schottky-Type UV Photodetector",

abstract = "A RuO2/GaN Schottky diode was designed and fabricated for application as a UV photodetector. The fabricated RuO2/GaN Schottky diode showed a breakdown at over -50 V, plus a leakage current of 9 nA/cm2 at -5 V with a good uniformity that was one order of magnitude lower than that of a Pt/GaN Schottky diode under the same epitaxial conditions. The proposed RuO2/GaN Schottky photodiode also exhibited a UV-visible rejection ratio of 3 × 105 and responsivity of 0.23 A/W at 330 nm.",

author = "Shin, {Sang Hoon} and Jung, {Byung Kwon} and Lee, {Jae Hoon} and Lee, {Myoung Bok} and Lee, {Jung Hee} and Lee, {Yong Hyun} and Hahm, {Sung Ho}",

year = "2001",

month = nov,

doi = "10.1002/1521-396X(200111)188:1<341::AID-PSSA341>3.0.CO;2-0",

language = "English",

volume = "188",

pages = "341--344",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - Superior Characteristics of RuO2/GaN Schottky-Type UV Photodetector

AU - Shin, Sang Hoon

AU - Jung, Byung Kwon

AU - Lee, Jae Hoon

AU - Lee, Myoung Bok

AU - Lee, Jung Hee

AU - Lee, Yong Hyun

AU - Hahm, Sung Ho

PY - 2001/11

Y1 - 2001/11

N2 - A RuO2/GaN Schottky diode was designed and fabricated for application as a UV photodetector. The fabricated RuO2/GaN Schottky diode showed a breakdown at over -50 V, plus a leakage current of 9 nA/cm2 at -5 V with a good uniformity that was one order of magnitude lower than that of a Pt/GaN Schottky diode under the same epitaxial conditions. The proposed RuO2/GaN Schottky photodiode also exhibited a UV-visible rejection ratio of 3 × 105 and responsivity of 0.23 A/W at 330 nm.

AB - A RuO2/GaN Schottky diode was designed and fabricated for application as a UV photodetector. The fabricated RuO2/GaN Schottky diode showed a breakdown at over -50 V, plus a leakage current of 9 nA/cm2 at -5 V with a good uniformity that was one order of magnitude lower than that of a Pt/GaN Schottky diode under the same epitaxial conditions. The proposed RuO2/GaN Schottky photodiode also exhibited a UV-visible rejection ratio of 3 × 105 and responsivity of 0.23 A/W at 330 nm.

UR - http://www.scopus.com/inward/record.url?scp=0141724956&partnerID=8YFLogxK

U2 - 10.1002/1521-396X(200111)188:1<341::AID-PSSA341>3.0.CO;2-0

DO - 10.1002/1521-396X(200111)188:1<341::AID-PSSA341>3.0.CO;2-0

M3 - Article

AN - SCOPUS:0141724956

SN - 0031-8965

VL - 188

SP - 341

EP - 344

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

ER -

Superior Characteristics of RuO₂/GaN Schottky-Type UV Photodetector

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