Superior Characteristics of RuO2/GaN Schottky-Type UV Photodetector

Sang Hoon Shin; Byung Kwon Jung; Jae Hoon Lee; Myoung Bok Lee; Jung Hee Lee; Yong Hyun Lee; Sung Ho Hahm

doi:10.1002/1521-396X(200111)188:1<341::AID-PSSA341>3.0.CO;2-0

Superior Characteristics of RuO₂/GaN Schottky-Type UV Photodetector

Sang Hoon Shin
, Byung Kwon Jung
, Jae Hoon Lee
, Myoung Bok Lee
, Jung Hee Lee
, Yong Hyun Lee
, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A RuO₂/GaN Schottky diode was designed and fabricated for application as a UV photodetector. The fabricated RuO₂/GaN Schottky diode showed a breakdown at over -50 V, plus a leakage current of 9 nA/cm² at -5 V with a good uniformity that was one order of magnitude lower than that of a Pt/GaN Schottky diode under the same epitaxial conditions. The proposed RuO₂/GaN Schottky photodiode also exhibited a UV-visible rejection ratio of 3 × 10⁵ and responsivity of 0.23 A/W at 330 nm.

Original language	English
Pages (from-to)	341-344
Number of pages	4
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200111)188:1<341::AID-PSSA341>3.0.CO;2-0
State	Published - Nov 2001

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10.1002/1521-396X(200111)188:1<341::AID-PSSA341>3.0.CO;2-0

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title = "Superior Characteristics of RuO2/GaN Schottky-Type UV Photodetector",

abstract = "A RuO2/GaN Schottky diode was designed and fabricated for application as a UV photodetector. The fabricated RuO2/GaN Schottky diode showed a breakdown at over -50 V, plus a leakage current of 9 nA/cm2 at -5 V with a good uniformity that was one order of magnitude lower than that of a Pt/GaN Schottky diode under the same epitaxial conditions. The proposed RuO2/GaN Schottky photodiode also exhibited a UV-visible rejection ratio of 3 × 105 and responsivity of 0.23 A/W at 330 nm.",

author = "Shin, \{Sang Hoon\} and Jung, \{Byung Kwon\} and Lee, \{Jae Hoon\} and Lee, \{Myoung Bok\} and Lee, \{Jung Hee\} and Lee, \{Yong Hyun\} and Hahm, \{Sung Ho\}",

year = "2001",

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doi = "10.1002/1521-396X(200111)188:1<341::AID-PSSA341>3.0.CO;2-0",

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T1 - Superior Characteristics of RuO2/GaN Schottky-Type UV Photodetector

AU - Shin, Sang Hoon

AU - Jung, Byung Kwon

AU - Lee, Jae Hoon

AU - Lee, Myoung Bok

AU - Lee, Jung Hee

AU - Lee, Yong Hyun

AU - Hahm, Sung Ho

PY - 2001/11

Y1 - 2001/11

N2 - A RuO2/GaN Schottky diode was designed and fabricated for application as a UV photodetector. The fabricated RuO2/GaN Schottky diode showed a breakdown at over -50 V, plus a leakage current of 9 nA/cm2 at -5 V with a good uniformity that was one order of magnitude lower than that of a Pt/GaN Schottky diode under the same epitaxial conditions. The proposed RuO2/GaN Schottky photodiode also exhibited a UV-visible rejection ratio of 3 × 105 and responsivity of 0.23 A/W at 330 nm.

AB - A RuO2/GaN Schottky diode was designed and fabricated for application as a UV photodetector. The fabricated RuO2/GaN Schottky diode showed a breakdown at over -50 V, plus a leakage current of 9 nA/cm2 at -5 V with a good uniformity that was one order of magnitude lower than that of a Pt/GaN Schottky diode under the same epitaxial conditions. The proposed RuO2/GaN Schottky photodiode also exhibited a UV-visible rejection ratio of 3 × 105 and responsivity of 0.23 A/W at 330 nm.

UR - https://www.scopus.com/pages/publications/0141724956

U2 - 10.1002/1521-396X(200111)188:1<341::AID-PSSA341>3.0.CO;2-0

DO - 10.1002/1521-396X(200111)188:1<341::AID-PSSA341>3.0.CO;2-0

M3 - Article

AN - SCOPUS:0141724956

SN - 0031-8965

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JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

ER -

Superior Characteristics of RuO₂/GaN Schottky-Type UV Photodetector

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