Superior contact properties of trench filled contact for 3D MOSFET

Jae Hyun Jung; Heon Bok Lee; Jong Bong Ha; Hee Sung Kang; Jung Hee Lee; Sung Ho Hahm

doi:10.1109/EDSSC.2009.5394214

Superior contact properties of trench filled contact for 3D MOSFET

Jae Hyun Jung, Heon Bok Lee, Jong Bong Ha, Hee Sung Kang, Jung Hee Lee, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we examined the applicability of the trench filled contact technique for the self-aligned dual metal contact for 3D MOSFET through both experiments and simulation. The proposed contact technique has the lower parasitic resistance and capacitance compared with the conventional silicide and with the elevated source/drain structure. Using this technique, the ITRS requirement for the source/drain contact resistance can be satisfied.

Original language	English
Title of host publication	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Pages	469-472
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2009.5394214
State	Published - 2009
Event	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 - Xi'an, China Duration: 25 Dec 2009 → 27 Dec 2009

Publication series

Name	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

Conference

Conference	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Country/Territory	China
City	Xi'an
Period	25/12/09 → 27/12/09

Keywords

Contact resistance
MOSFET
Source/drain junction

Access to Document

10.1109/EDSSC.2009.5394214

Cite this

Jung, J. H., Lee, H. B., Ha, J. B., Kang, H. S., Lee, J. H., & Hahm, S. H. (2009). Superior contact properties of trench filled contact for 3D MOSFET. In 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 (pp. 469-472). Article 5394214 (2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009). https://doi.org/10.1109/EDSSC.2009.5394214

@inproceedings{ad6f57b10cc44dd48140d7f2a1fb8d7d,

title = "Superior contact properties of trench filled contact for 3D MOSFET",

abstract = "In this paper, we examined the applicability of the trench filled contact technique for the self-aligned dual metal contact for 3D MOSFET through both experiments and simulation. The proposed contact technique has the lower parasitic resistance and capacitance compared with the conventional silicide and with the elevated source/drain structure. Using this technique, the ITRS requirement for the source/drain contact resistance can be satisfied.",

keywords = "Contact resistance, MOSFET, Source/drain junction",

author = "Jung, {Jae Hyun} and Lee, {Heon Bok} and Ha, {Jong Bong} and Kang, {Hee Sung} and Lee, {Jung Hee} and Hahm, {Sung Ho}",

year = "2009",

doi = "10.1109/EDSSC.2009.5394214",

language = "English",

isbn = "9781424442980",

series = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009",

pages = "469--472",

booktitle = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009",

note = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 ; Conference date: 25-12-2009 Through 27-12-2009",

}

Jung, JH, Lee, HB, Ha, JB, Kang, HS, Lee, JH & Hahm, SH 2009, Superior contact properties of trench filled contact for 3D MOSFET. in 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009., 5394214, 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009, pp. 469-472, 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009, Xi'an, China, 25/12/09. https://doi.org/10.1109/EDSSC.2009.5394214

Superior contact properties of trench filled contact for 3D MOSFET. / Jung, Jae Hyun; Lee, Heon Bok; Ha, Jong Bong et al.
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009. 2009. p. 469-472 5394214 (2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Superior contact properties of trench filled contact for 3D MOSFET

AU - Jung, Jae Hyun

AU - Lee, Heon Bok

AU - Ha, Jong Bong

AU - Kang, Hee Sung

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

PY - 2009

Y1 - 2009

N2 - In this paper, we examined the applicability of the trench filled contact technique for the self-aligned dual metal contact for 3D MOSFET through both experiments and simulation. The proposed contact technique has the lower parasitic resistance and capacitance compared with the conventional silicide and with the elevated source/drain structure. Using this technique, the ITRS requirement for the source/drain contact resistance can be satisfied.

AB - In this paper, we examined the applicability of the trench filled contact technique for the self-aligned dual metal contact for 3D MOSFET through both experiments and simulation. The proposed contact technique has the lower parasitic resistance and capacitance compared with the conventional silicide and with the elevated source/drain structure. Using this technique, the ITRS requirement for the source/drain contact resistance can be satisfied.

KW - Contact resistance

KW - MOSFET

KW - Source/drain junction

UR - http://www.scopus.com/inward/record.url?scp=77949619089&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2009.5394214

DO - 10.1109/EDSSC.2009.5394214

M3 - Conference contribution

AN - SCOPUS:77949619089

SN - 9781424442980

T3 - 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

SP - 469

EP - 472

BT - 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

T2 - 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

Y2 - 25 December 2009 through 27 December 2009

ER -

Superior contact properties of trench filled contact for 3D MOSFET

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Keywords

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