Surface-emitting AlGaAs/GaAs DH LED with buried-window cylindrical lens

Tae Kyung Yoo; Sung Ho Hahm; Young Se Kwon

doi:10.1143/JJAP.27.L2357

Surface-emitting AlGaAs/GaAs DH LED with buried-window cylindrical lens

Tae Kyung Yoo, Sung Ho Hahm, Young Se Kwon

School of Electronics Engineering

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Surface-emitting AlGaAs/GaAs double heterostructure (DH) LED's with buried-window cylindrical lenses have been fabricated. The selective meltback and regrowth were used for the lens and DH junctions. The far-field pattern has the full width at half maximum (FWHM) of 90Ŷ. A small protrusion with the full width of 20Ŷ was observed in the far-field pattern. The maximum power of 20 mW was obtained from the 1 Ɓmȕ60 Ɓmȕ300 Ɓm active layer.

Original language	English
Pages (from-to)	L2357-L2360
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	27
Issue number	12A
DOIs	https://doi.org/10.1143/JJAP.27.L2357
State	Published - Dec 1988

Keywords

Compound semiconductors
Double heterostructure
GaAs
Lens
Light emitting diodes
Liquid phase epitaxy

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10.1143/JJAP.27.L2357

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title = "Surface-emitting AlGaAs/GaAs DH LED with buried-window cylindrical lens",

abstract = "Surface-emitting AlGaAs/GaAs double heterostructure (DH) LED's with buried-window cylindrical lenses have been fabricated. The selective meltback and regrowth were used for the lens and DH junctions. The far-field pattern has the full width at half maximum (FWHM) of 90Ŷ. A small protrusion with the full width of 20Ŷ was observed in the far-field pattern. The maximum power of 20 mW was obtained from the 1 Ɓmȕ60 Ɓmȕ300 Ɓm active layer.",

keywords = "Compound semiconductors, Double heterostructure, GaAs, Lens, Light emitting diodes, Liquid phase epitaxy",

author = "Yoo, {Tae Kyung} and Hahm, {Sung Ho} and Kwon, {Young Se}",

year = "1988",

month = dec,

doi = "10.1143/JJAP.27.L2357",

language = "English",

volume = "27",

pages = "L2357--L2360",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Surface-emitting AlGaAs/GaAs DH LED with buried-window cylindrical lens

AU - Yoo, Tae Kyung

AU - Hahm, Sung Ho

AU - Kwon, Young Se

PY - 1988/12

Y1 - 1988/12

N2 - Surface-emitting AlGaAs/GaAs double heterostructure (DH) LED's with buried-window cylindrical lenses have been fabricated. The selective meltback and regrowth were used for the lens and DH junctions. The far-field pattern has the full width at half maximum (FWHM) of 90Ŷ. A small protrusion with the full width of 20Ŷ was observed in the far-field pattern. The maximum power of 20 mW was obtained from the 1 Ɓmȕ60 Ɓmȕ300 Ɓm active layer.

AB - Surface-emitting AlGaAs/GaAs double heterostructure (DH) LED's with buried-window cylindrical lenses have been fabricated. The selective meltback and regrowth were used for the lens and DH junctions. The far-field pattern has the full width at half maximum (FWHM) of 90Ŷ. A small protrusion with the full width of 20Ŷ was observed in the far-field pattern. The maximum power of 20 mW was obtained from the 1 Ɓmȕ60 Ɓmȕ300 Ɓm active layer.

KW - Compound semiconductors

KW - Double heterostructure

KW - GaAs

KW - Lens

KW - Light emitting diodes

KW - Liquid phase epitaxy

UR - http://www.scopus.com/inward/record.url?scp=0024131301&partnerID=8YFLogxK

U2 - 10.1143/JJAP.27.L2357

DO - 10.1143/JJAP.27.L2357

M3 - Article

AN - SCOPUS:0024131301

SN - 0021-4922

VL - 27

SP - L2357-L2360

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 12A

ER -

Surface-emitting AlGaAs/GaAs DH LED with buried-window cylindrical lens

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Keywords

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