Abstract
Surface-emitting AlGaAs/GaAs double heterostructure (DH) LED's with buried-window cylindrical lenses have been fabricated. The selective meltback and regrowth were used for the lens and DH junctions. The far-field pattern has the full width at half maximum (FWHM) of 90Ŷ. A small protrusion with the full width of 20Ŷ was observed in the far-field pattern. The maximum power of 20 mW was obtained from the 1 Ɓmȕ60 Ɓmȕ300 Ɓm active layer.
| Original language | English |
|---|---|
| Pages (from-to) | L2357-L2360 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 27 |
| Issue number | 12A |
| DOIs | |
| State | Published - Dec 1988 |
Keywords
- Compound semiconductors
- Double heterostructure
- GaAs
- Lens
- Light emitting diodes
- Liquid phase epitaxy