Surface engineering of ferroelectric polymer for the enhanced electrical performance of organic transistor memory

Do Kyung Kim, Gyu Jeong Lee, Jae Hyun Lee, Min Hoi Kim, Jin Hyuk Bae

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1 Scopus citations

Abstract

We suggest a viable surface control method to improve the electrical properties of organic nonvolatile memory transistors. For viable surface control, the surface of the ferroelectric insulator in the memory field-effect transistors was modified using a smooth-contact-curing process. For the modification of the ferroelectric polymer, during the curing of the ferroelectric insulators, the smooth surface of a soft elastomer contacts intimately with the ferroelectric surface. This smooth-contact-curing process reduced the surface roughness of the ferroelectric insulator without degrading its ferroelectric properties. The reduced roughness of the ferroelectric insulator increases the mobility of the organic field-effect transistor by approximately eight times, which results in a high memory on-off ratio and a low-voltage reading operation.

Original languageEnglish
Article number05GC03
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume57
Issue number5
DOIs
StatePublished - May 2018

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