Abstract
A study was conducted to demonstrate a surface plasmons (SP)-enhanced InGaN/GaN multiple quantum well (MQW) blue LED with a Ag nanoparticles layers between the n-GaN layer and the MQW layer. It was observed during the study that the recombination rate in the QW was faster than emission from the QW as determined by time-resolved photoluminescence (TR-PL). The study used a blue LED deposited on a sapphire substrate in a growth chamber in a low-pressure metal-organic chemical vapor deposition systems. The study found that the Ag nanoparticles can be used to increase the IQE of InGaN/Gan blue LEDs. It was observed that the optical output power of LEDs was improved at an input current of 100 mA, the PL decay time of LEDs with Ag nanoparticles decreased, and PL decay rate can be enhanced by the QW-SP coupling rate.
Original language | English |
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Pages (from-to) | 1253-1257 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 20 |
Issue number | 7 |
DOIs | |
State | Published - 4 Apr 2008 |