Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition

Y. J. Li; Y. W. Heo; J. M. Erie; H. Kim; K. Ip; S. J. Pearton; D. P. Norton

doi:10.1007/s11664-006-0095-z

Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition

Y. J. Li, Y. W. Heo, J. M. Erie, H. Kim, K. Ip, S. J. Pearton, D. P. Norton

University of Florida

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The transport and optical properties of phosphorus-doped (Zn,Mg)O thin films grown via pulsed laser deposition (PLD) are studied. The carrier type of as-deposited (Zn,Mg)O:P films converts from n-type to p-type with increasing oxygen partial pressure. All the films exhibit good crystallinity with c-axis orientation. This result indicates the importance of oxidation conditions in realizing p-type (Zn,Mg)O:P films. The as-deposited ZnO:P film properties show a strong dependence on the deposition ambient at different growth temperatures. The resistivity of the samples deposited in O ₃/O ₂ mixture is two orders of magnitude higher than the films grown in oxygen and O ₂/Ar/H ₂ mixture. The room-temperature photoluminescence (PL) of the as-deposited films has been shown that growing in the O ₂/Ar/H ₂ mixture ambient significantly increases the band edge emission while inhibiting the visible emission. The enhanced ultraviolet (UV) emission in the films grown in O ₂/Ar/H ₂ mixture may result from hydrogen passivation of the deep level emission centers. The annealed ZnO:P films are n-type with nonlinear dependence of resistivity on annealing temperature. The resistivity increases in the films with annealing at 800°C while decreasing with further increasing annealing temperature. Strong visible light emission is observed from the ZnO:P films annealed in oxygen.

Original language	English
Pages (from-to)	530-537
Number of pages	8
Journal	Journal of Electronic Materials
Volume	35
Issue number	4
DOIs	https://doi.org/10.1007/s11664-006-0095-z
State	Published - Apr 2006

Keywords

(Zn,Mg)O
Phosphorus doped
Pulsed laser deposition
Wide bandgap semiconductor
Zinc oxide

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title = "Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition",

abstract = "The transport and optical properties of phosphorus-doped (Zn,Mg)O thin films grown via pulsed laser deposition (PLD) are studied. The carrier type of as-deposited (Zn,Mg)O:P films converts from n-type to p-type with increasing oxygen partial pressure. All the films exhibit good crystallinity with c-axis orientation. This result indicates the importance of oxidation conditions in realizing p-type (Zn,Mg)O:P films. The as-deposited ZnO:P film properties show a strong dependence on the deposition ambient at different growth temperatures. The resistivity of the samples deposited in O 3/O 2 mixture is two orders of magnitude higher than the films grown in oxygen and O 2/Ar/H 2 mixture. The room-temperature photoluminescence (PL) of the as-deposited films has been shown that growing in the O 2/Ar/H 2 mixture ambient significantly increases the band edge emission while inhibiting the visible emission. The enhanced ultraviolet (UV) emission in the films grown in O 2/Ar/H 2 mixture may result from hydrogen passivation of the deep level emission centers. The annealed ZnO:P films are n-type with nonlinear dependence of resistivity on annealing temperature. The resistivity increases in the films with annealing at 800°C while decreasing with further increasing annealing temperature. Strong visible light emission is observed from the ZnO:P films annealed in oxygen.",

keywords = "(Zn,Mg)O, Phosphorus doped, Pulsed laser deposition, Wide bandgap semiconductor, Zinc oxide",

author = "Li, {Y. J.} and Heo, {Y. W.} and Erie, {J. M.} and H. Kim and K. Ip and Pearton, {S. J.} and Norton, {D. P.}",

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T1 - Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition

AU - Li, Y. J.

AU - Heo, Y. W.

AU - Erie, J. M.

AU - Kim, H.

AU - Ip, K.

AU - Pearton, S. J.

AU - Norton, D. P.

PY - 2006/4

Y1 - 2006/4

N2 - The transport and optical properties of phosphorus-doped (Zn,Mg)O thin films grown via pulsed laser deposition (PLD) are studied. The carrier type of as-deposited (Zn,Mg)O:P films converts from n-type to p-type with increasing oxygen partial pressure. All the films exhibit good crystallinity with c-axis orientation. This result indicates the importance of oxidation conditions in realizing p-type (Zn,Mg)O:P films. The as-deposited ZnO:P film properties show a strong dependence on the deposition ambient at different growth temperatures. The resistivity of the samples deposited in O 3/O 2 mixture is two orders of magnitude higher than the films grown in oxygen and O 2/Ar/H 2 mixture. The room-temperature photoluminescence (PL) of the as-deposited films has been shown that growing in the O 2/Ar/H 2 mixture ambient significantly increases the band edge emission while inhibiting the visible emission. The enhanced ultraviolet (UV) emission in the films grown in O 2/Ar/H 2 mixture may result from hydrogen passivation of the deep level emission centers. The annealed ZnO:P films are n-type with nonlinear dependence of resistivity on annealing temperature. The resistivity increases in the films with annealing at 800°C while decreasing with further increasing annealing temperature. Strong visible light emission is observed from the ZnO:P films annealed in oxygen.

AB - The transport and optical properties of phosphorus-doped (Zn,Mg)O thin films grown via pulsed laser deposition (PLD) are studied. The carrier type of as-deposited (Zn,Mg)O:P films converts from n-type to p-type with increasing oxygen partial pressure. All the films exhibit good crystallinity with c-axis orientation. This result indicates the importance of oxidation conditions in realizing p-type (Zn,Mg)O:P films. The as-deposited ZnO:P film properties show a strong dependence on the deposition ambient at different growth temperatures. The resistivity of the samples deposited in O 3/O 2 mixture is two orders of magnitude higher than the films grown in oxygen and O 2/Ar/H 2 mixture. The room-temperature photoluminescence (PL) of the as-deposited films has been shown that growing in the O 2/Ar/H 2 mixture ambient significantly increases the band edge emission while inhibiting the visible emission. The enhanced ultraviolet (UV) emission in the films grown in O 2/Ar/H 2 mixture may result from hydrogen passivation of the deep level emission centers. The annealed ZnO:P films are n-type with nonlinear dependence of resistivity on annealing temperature. The resistivity increases in the films with annealing at 800°C while decreasing with further increasing annealing temperature. Strong visible light emission is observed from the ZnO:P films annealed in oxygen.

KW - (Zn,Mg)O

KW - Phosphorus doped

KW - Pulsed laser deposition

KW - Wide bandgap semiconductor

KW - Zinc oxide

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JO - Journal of Electronic Materials

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Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition

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