Synthesis and electrical characteristics of Ag2S nanocrystals

Jaewon Jang; Kyoungah Cho; Sang Heon Lee; Sangsig Kim

doi:10.1016/j.matlet.2007.08.080

Synthesis and electrical characteristics of Ag₂S nanocrystals

Jaewon Jang, Kyoungah Cho, Sang Heon Lee, Sangsig Kim

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

In this paper, Ag₂S nanocrystals were synthesized by the colloidal method at room temperature. The synthesized Ag₂S nanocrystals were spherical in shape with a diameter of about 10-20 nm and high crystallinity, which were confirmed by the high resolution transmission electron microscope images and selected-area electron diffraction patterns. In order to investigate the electrical properties of the Ag₂S nanocrystals, a back-gate thin film transistor (TFT) device structure was fabricated on SiO₂/Si substrates. The drain current of TFT composed of Ag₂S was increased according to the increase in the voltages of drain-source and gate, revealing n-type semiconductor properties. The phase of the Ag₂S nanocrystals, which is related to their electrical properties, was proved to be α-phase by thermo-gravimetric analysis, differential thermal analysis, and X-ray diffraction.

Original language	English
Pages (from-to)	1438-1440
Number of pages	3
Journal	Materials Letters
Volume	62
Issue number	8-9
DOIs	https://doi.org/10.1016/j.matlet.2007.08.080
State	Published - 31 Mar 2008

Keywords

Electrical properties
Semiconductors
Silver sulfide

Access to Document

10.1016/j.matlet.2007.08.080

Cite this

@article{a08cd9609d0947779df3824f45e076ad,

title = "Synthesis and electrical characteristics of Ag2S nanocrystals",

abstract = "In this paper, Ag2S nanocrystals were synthesized by the colloidal method at room temperature. The synthesized Ag2S nanocrystals were spherical in shape with a diameter of about 10-20 nm and high crystallinity, which were confirmed by the high resolution transmission electron microscope images and selected-area electron diffraction patterns. In order to investigate the electrical properties of the Ag2S nanocrystals, a back-gate thin film transistor (TFT) device structure was fabricated on SiO2/Si substrates. The drain current of TFT composed of Ag2S was increased according to the increase in the voltages of drain-source and gate, revealing n-type semiconductor properties. The phase of the Ag2S nanocrystals, which is related to their electrical properties, was proved to be α-phase by thermo-gravimetric analysis, differential thermal analysis, and X-ray diffraction.",

keywords = "Electrical properties, Semiconductors, Silver sulfide",

author = "Jaewon Jang and Kyoungah Cho and Lee, {Sang Heon} and Sangsig Kim",

year = "2008",

month = mar,

day = "31",

doi = "10.1016/j.matlet.2007.08.080",

language = "English",

volume = "62",

pages = "1438--1440",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

number = "8-9",

}

TY - JOUR

T1 - Synthesis and electrical characteristics of Ag2S nanocrystals

AU - Jang, Jaewon

AU - Cho, Kyoungah

AU - Lee, Sang Heon

AU - Kim, Sangsig

PY - 2008/3/31

Y1 - 2008/3/31

N2 - In this paper, Ag2S nanocrystals were synthesized by the colloidal method at room temperature. The synthesized Ag2S nanocrystals were spherical in shape with a diameter of about 10-20 nm and high crystallinity, which were confirmed by the high resolution transmission electron microscope images and selected-area electron diffraction patterns. In order to investigate the electrical properties of the Ag2S nanocrystals, a back-gate thin film transistor (TFT) device structure was fabricated on SiO2/Si substrates. The drain current of TFT composed of Ag2S was increased according to the increase in the voltages of drain-source and gate, revealing n-type semiconductor properties. The phase of the Ag2S nanocrystals, which is related to their electrical properties, was proved to be α-phase by thermo-gravimetric analysis, differential thermal analysis, and X-ray diffraction.

AB - In this paper, Ag2S nanocrystals were synthesized by the colloidal method at room temperature. The synthesized Ag2S nanocrystals were spherical in shape with a diameter of about 10-20 nm and high crystallinity, which were confirmed by the high resolution transmission electron microscope images and selected-area electron diffraction patterns. In order to investigate the electrical properties of the Ag2S nanocrystals, a back-gate thin film transistor (TFT) device structure was fabricated on SiO2/Si substrates. The drain current of TFT composed of Ag2S was increased according to the increase in the voltages of drain-source and gate, revealing n-type semiconductor properties. The phase of the Ag2S nanocrystals, which is related to their electrical properties, was proved to be α-phase by thermo-gravimetric analysis, differential thermal analysis, and X-ray diffraction.

KW - Electrical properties

KW - Semiconductors

KW - Silver sulfide

UR - http://www.scopus.com/inward/record.url?scp=38149036493&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2007.08.080

DO - 10.1016/j.matlet.2007.08.080

M3 - Article

AN - SCOPUS:38149036493

SN - 0167-577X

VL - 62

SP - 1438

EP - 1440

JO - Materials Letters

JF - Materials Letters

IS - 8-9

ER -

Synthesis and electrical characteristics of Ag₂S nanocrystals

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this