Abstract
In this paper, Ag2S nanocrystals were synthesized by the colloidal method at room temperature. The synthesized Ag2S nanocrystals were spherical in shape with a diameter of about 10-20 nm and high crystallinity, which were confirmed by the high resolution transmission electron microscope images and selected-area electron diffraction patterns. In order to investigate the electrical properties of the Ag2S nanocrystals, a back-gate thin film transistor (TFT) device structure was fabricated on SiO2/Si substrates. The drain current of TFT composed of Ag2S was increased according to the increase in the voltages of drain-source and gate, revealing n-type semiconductor properties. The phase of the Ag2S nanocrystals, which is related to their electrical properties, was proved to be α-phase by thermo-gravimetric analysis, differential thermal analysis, and X-ray diffraction.
| Original language | English |
|---|---|
| Pages (from-to) | 1438-1440 |
| Number of pages | 3 |
| Journal | Materials Letters |
| Volume | 62 |
| Issue number | 8-9 |
| DOIs | |
| State | Published - 31 Mar 2008 |
Keywords
- Electrical properties
- Semiconductors
- Silver sulfide
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