Synthesis of step-shaped bismuth nanowires-an approach towards the fabrication of self-homojunction

Sovan Kumar Panda; Dongil Han; Hyunjun Yoo; Hyunjung Shin; Hongsik Park; Jimmy Xu

doi:10.1149/1.3569112

Synthesis of step-shaped bismuth nanowires-an approach towards the fabrication of self-homojunction

Sovan Kumar Panda, Dongil Han, Hyunjun Yoo, Hyunjung Shin, Hongsik Park, Jimmy Xu

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Step-shaped bismuth (Bi) nanowires were fabricated by direct current electrochemical deposition technique using diameter-modulated anodic aluminum oxide membranes (AAO) as templates. The nanowires have core-sheath structure with a crystalline rhombohedral Bi core surrounded by a mixed oxide (amorphous and monoclinic Bi₂O₃) layer. We observed transition of nanowire property from semimetal to semiconductor at wire diameter below 50 nm. Based on the semimetal to semiconductor transition property with just changing the wire diameter, the step-shaped Bi nanowires could be predicted to form a semimetal-semiconductor self-homojunction.

Original language	English
Pages (from-to)	E21-E24
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1149/1.3569112
State	Published - 2011

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title = "Synthesis of step-shaped bismuth nanowires-an approach towards the fabrication of self-homojunction",

abstract = "Step-shaped bismuth (Bi) nanowires were fabricated by direct current electrochemical deposition technique using diameter-modulated anodic aluminum oxide membranes (AAO) as templates. The nanowires have core-sheath structure with a crystalline rhombohedral Bi core surrounded by a mixed oxide (amorphous and monoclinic Bi2O3) layer. We observed transition of nanowire property from semimetal to semiconductor at wire diameter below 50 nm. Based on the semimetal to semiconductor transition property with just changing the wire diameter, the step-shaped Bi nanowires could be predicted to form a semimetal-semiconductor self-homojunction.",

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year = "2011",

doi = "10.1149/1.3569112",

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T1 - Synthesis of step-shaped bismuth nanowires-an approach towards the fabrication of self-homojunction

AU - Panda, Sovan Kumar

AU - Han, Dongil

AU - Yoo, Hyunjun

AU - Shin, Hyunjung

AU - Park, Hongsik

AU - Xu, Jimmy

PY - 2011

Y1 - 2011

N2 - Step-shaped bismuth (Bi) nanowires were fabricated by direct current electrochemical deposition technique using diameter-modulated anodic aluminum oxide membranes (AAO) as templates. The nanowires have core-sheath structure with a crystalline rhombohedral Bi core surrounded by a mixed oxide (amorphous and monoclinic Bi2O3) layer. We observed transition of nanowire property from semimetal to semiconductor at wire diameter below 50 nm. Based on the semimetal to semiconductor transition property with just changing the wire diameter, the step-shaped Bi nanowires could be predicted to form a semimetal-semiconductor self-homojunction.

AB - Step-shaped bismuth (Bi) nanowires were fabricated by direct current electrochemical deposition technique using diameter-modulated anodic aluminum oxide membranes (AAO) as templates. The nanowires have core-sheath structure with a crystalline rhombohedral Bi core surrounded by a mixed oxide (amorphous and monoclinic Bi2O3) layer. We observed transition of nanowire property from semimetal to semiconductor at wire diameter below 50 nm. Based on the semimetal to semiconductor transition property with just changing the wire diameter, the step-shaped Bi nanowires could be predicted to form a semimetal-semiconductor self-homojunction.

UR - https://www.scopus.com/pages/publications/79953795992

U2 - 10.1149/1.3569112

DO - 10.1149/1.3569112

M3 - Article

AN - SCOPUS:79953795992

SN - 1099-0062

VL - 14

SP - E21-E24

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -

Synthesis of step-shaped bismuth nanowires-an approach towards the fabrication of self-homojunction

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