Te nanoneedles induced entanglement and thermoelectric improvement of SnSe

Hyun Ju; Myeongjin Kim; Jinglei Yang; Jooheon Kim

doi:10.3390/ma13112523

Te nanoneedles induced entanglement and thermoelectric improvement of SnSe

Hyun Ju, Myeongjin Kim, Jinglei Yang, Jooheon Kim

Major in Hydrogen & Renewable Energy

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Chalcogenide-based materials have attracted widespread interest in high-performance thermoelectric research fields. Astrategy for the application of two types of chalcogenide for improved thermoelectric performance is described herein. Tin selenide (SnSe) is used as a base material, and Te nanoneedles are crystallized in the SnSe, resulting in the generation of a composite structure of SnSe with Te nanoneedles. The thermoelectric properties with various reaction times are investigated to reveal the optimum conditions for enhanced thermoelectric performance. A reaction time of 4 h at 450 K generated a composite Te nanoneedles/SnSe sample with the maximum ZT value, 3.2 times larger than that of the pristine SnSe. This result is attributed to both the reduced thermal conductivity from the effective phonon scattering of heterointerfaces and the improved electrical conductivity value due to the introduction of Te nanoparticles. This strategy suggests an approach to generating high-performance practical thermoelectric materials.

Original language	English
Article number	2523
Journal	Materials
Volume	13
Issue number	11
DOIs	https://doi.org/10.3390/ma13112523
State	Published - 1 Jun 2020

Keywords

Inner-site crystallization
Nanoneedles
Tellurium
Thermoelectric
Tin selenide

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10.3390/ma13112523

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title = "Te nanoneedles induced entanglement and thermoelectric improvement of SnSe",

abstract = "Chalcogenide-based materials have attracted widespread interest in high-performance thermoelectric research fields. Astrategy for the application of two types of chalcogenide for improved thermoelectric performance is described herein. Tin selenide (SnSe) is used as a base material, and Te nanoneedles are crystallized in the SnSe, resulting in the generation of a composite structure of SnSe with Te nanoneedles. The thermoelectric properties with various reaction times are investigated to reveal the optimum conditions for enhanced thermoelectric performance. A reaction time of 4 h at 450 K generated a composite Te nanoneedles/SnSe sample with the maximum ZT value, 3.2 times larger than that of the pristine SnSe. This result is attributed to both the reduced thermal conductivity from the effective phonon scattering of heterointerfaces and the improved electrical conductivity value due to the introduction of Te nanoparticles. This strategy suggests an approach to generating high-performance practical thermoelectric materials.",

keywords = "Inner-site crystallization, Nanoneedles, Tellurium, Thermoelectric, Tin selenide",

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AU - Ju, Hyun

AU - Kim, Myeongjin

AU - Yang, Jinglei

AU - Kim, Jooheon

PY - 2020/6/1

Y1 - 2020/6/1

N2 - Chalcogenide-based materials have attracted widespread interest in high-performance thermoelectric research fields. Astrategy for the application of two types of chalcogenide for improved thermoelectric performance is described herein. Tin selenide (SnSe) is used as a base material, and Te nanoneedles are crystallized in the SnSe, resulting in the generation of a composite structure of SnSe with Te nanoneedles. The thermoelectric properties with various reaction times are investigated to reveal the optimum conditions for enhanced thermoelectric performance. A reaction time of 4 h at 450 K generated a composite Te nanoneedles/SnSe sample with the maximum ZT value, 3.2 times larger than that of the pristine SnSe. This result is attributed to both the reduced thermal conductivity from the effective phonon scattering of heterointerfaces and the improved electrical conductivity value due to the introduction of Te nanoparticles. This strategy suggests an approach to generating high-performance practical thermoelectric materials.

AB - Chalcogenide-based materials have attracted widespread interest in high-performance thermoelectric research fields. Astrategy for the application of two types of chalcogenide for improved thermoelectric performance is described herein. Tin selenide (SnSe) is used as a base material, and Te nanoneedles are crystallized in the SnSe, resulting in the generation of a composite structure of SnSe with Te nanoneedles. The thermoelectric properties with various reaction times are investigated to reveal the optimum conditions for enhanced thermoelectric performance. A reaction time of 4 h at 450 K generated a composite Te nanoneedles/SnSe sample with the maximum ZT value, 3.2 times larger than that of the pristine SnSe. This result is attributed to both the reduced thermal conductivity from the effective phonon scattering of heterointerfaces and the improved electrical conductivity value due to the introduction of Te nanoparticles. This strategy suggests an approach to generating high-performance practical thermoelectric materials.

KW - Inner-site crystallization

KW - Nanoneedles

KW - Tellurium

KW - Thermoelectric

KW - Tin selenide

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Te nanoneedles induced entanglement and thermoelectric improvement of SnSe

Abstract

Keywords

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