Temperature dependence of porous silicon resistance

Insik Yu; Il Kyoo Park; Chan Seob Cho; Jang Kyoo Shin; Jung Hee Lee; Jong Hyun Lee

doi:10.1109/EDMS.1994.771218

Temperature dependence of porous silicon resistance

Insik Yu, Il Kyoo Park, Chan Seob Cho, Jang Kyoo Shin, Jung Hee Lee, Jong Hyun Lee

School of Electronics Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Porous silicon resistors have been fabricated and the resistance at temperatures between 100 K and 400K has been measured in order to investigate the relationship between the temperature dependence of porous silicon resistance and the anodization process. Porous silicon layer was formed in the n⁺ region between contacts by anodization in 15 % aqueous HF solution. Anodization time was fixed at 5 minutes and anodization voltage varied. The temperature dependence of the porous silicon resistance varied widely with the anodization voltage. A model explaining the experimental results has been proposed in this paper.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771218
State	Published - 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan, Province of China Duration: 12 Jul 1994 → 15 Jul 1994

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	12/07/94 → 15/07/94

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10.1109/EDMS.1994.771218

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@conference{2bf4cf80b4194b05a0543d453934f6c2,

title = "Temperature dependence of porous silicon resistance",

abstract = "Porous silicon resistors have been fabricated and the resistance at temperatures between 100 K and 400K has been measured in order to investigate the relationship between the temperature dependence of porous silicon resistance and the anodization process. Porous silicon layer was formed in the n+ region between contacts by anodization in 15 \% aqueous HF solution. Anodization time was fixed at 5 minutes and anodization voltage varied. The temperature dependence of the porous silicon resistance varied widely with the anodization voltage. A model explaining the experimental results has been proposed in this paper.",

author = "Insik Yu and Park, \{Il Kyoo\} and Cho, \{Chan Seob\} and Shin, \{Jang Kyoo\} and Lee, \{Jung Hee\} and Lee, \{Jong Hyun\}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771218",

language = "English",

}

TY - CONF

T1 - Temperature dependence of porous silicon resistance

AU - Yu, Insik

AU - Park, Il Kyoo

AU - Cho, Chan Seob

AU - Shin, Jang Kyoo

AU - Lee, Jung Hee

AU - Lee, Jong Hyun

PY - 1994

Y1 - 1994

N2 - Porous silicon resistors have been fabricated and the resistance at temperatures between 100 K and 400K has been measured in order to investigate the relationship between the temperature dependence of porous silicon resistance and the anodization process. Porous silicon layer was formed in the n+ region between contacts by anodization in 15 % aqueous HF solution. Anodization time was fixed at 5 minutes and anodization voltage varied. The temperature dependence of the porous silicon resistance varied widely with the anodization voltage. A model explaining the experimental results has been proposed in this paper.

AB - Porous silicon resistors have been fabricated and the resistance at temperatures between 100 K and 400K has been measured in order to investigate the relationship between the temperature dependence of porous silicon resistance and the anodization process. Porous silicon layer was formed in the n+ region between contacts by anodization in 15 % aqueous HF solution. Anodization time was fixed at 5 minutes and anodization voltage varied. The temperature dependence of the porous silicon resistance varied widely with the anodization voltage. A model explaining the experimental results has been proposed in this paper.

UR - https://www.scopus.com/pages/publications/85063577681

U2 - 10.1109/EDMS.1994.771218

DO - 10.1109/EDMS.1994.771218

M3 - Paper

AN - SCOPUS:85063577681

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

Temperature dependence of porous silicon resistance

Abstract

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