Temperature dependence of the electrical properties of SrBi2Ta2O9 thin films deposited by radio-frequency magnetron sputtering

Cheol Hoon Yang; Sang Shik Park; Soon Gil Yoon

doi:10.1149/1.1838459

Temperature dependence of the electrical properties of SrBi₂Ta₂O₉ thin films deposited by radio-frequency magnetron sputtering

Cheol Hoon Yang
, Sang Shik Park
, Soon Gil Yoon

Chungnam National University
The Electrochemical Society

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Fatigue-free bilayered SrBi₂Ta₂O₉ (SBT) films were successfully prepared on Pt/Ti/SiO₂/Si substrates by radio-frequency magnetron sputtering. The applied voltage showing the maximum capacitance decreases with increasing temperature. The remanent polarization (2P_r) and the coercive field (2E_c) obtained for the SBT films were 13 μ/cm² and 128 kV/cm at an applied voltage of 5 V at 30°C. The films measured at room temperature and 100°C showed fatigue-free characteristics up to 10¹¹ cycles under 5 V bipolar square pulses. SBT films show the retention loss of only 6% after 10 years at 100°C. The leakage current density is less than 4.5 × 10^-7 μA/cm² at an applied voltage of 3 V at 75°C. The dominant transport mechanism of SBT films was an interface limited Schottky emission. The Pt/SBT contacts have a Schottky barrier height of Φ_B = 0.8 ∼ 1.04 eV.

Original language	English
Pages (from-to)	1330-1334
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	145
Issue number	4
DOIs	https://doi.org/10.1149/1.1838459
State	Published - Apr 1998

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title = "Temperature dependence of the electrical properties of SrBi2Ta2O9 thin films deposited by radio-frequency magnetron sputtering",

abstract = "Fatigue-free bilayered SrBi2Ta2O9 (SBT) films were successfully prepared on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering. The applied voltage showing the maximum capacitance decreases with increasing temperature. The remanent polarization (2Pr) and the coercive field (2Ec) obtained for the SBT films were 13 μ/cm2 and 128 kV/cm at an applied voltage of 5 V at 30°C. The films measured at room temperature and 100°C showed fatigue-free characteristics up to 1011 cycles under 5 V bipolar square pulses. SBT films show the retention loss of only 6\% after 10 years at 100°C. The leakage current density is less than 4.5 × 10-7 μA/cm2 at an applied voltage of 3 V at 75°C. The dominant transport mechanism of SBT films was an interface limited Schottky emission. The Pt/SBT contacts have a Schottky barrier height of ΦB = 0.8 ∼ 1.04 eV.",

author = "Yang, \{Cheol Hoon\} and Park, \{Sang Shik\} and Yoon, \{Soon Gil\}",

year = "1998",

month = apr,

doi = "10.1149/1.1838459",

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volume = "145",

pages = "1330--1334",

journal = "Journal of the Electrochemical Society",

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}

TY - JOUR

T1 - Temperature dependence of the electrical properties of SrBi2Ta2O9 thin films deposited by radio-frequency magnetron sputtering

AU - Yang, Cheol Hoon

AU - Park, Sang Shik

AU - Yoon, Soon Gil

PY - 1998/4

Y1 - 1998/4

N2 - Fatigue-free bilayered SrBi2Ta2O9 (SBT) films were successfully prepared on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering. The applied voltage showing the maximum capacitance decreases with increasing temperature. The remanent polarization (2Pr) and the coercive field (2Ec) obtained for the SBT films were 13 μ/cm2 and 128 kV/cm at an applied voltage of 5 V at 30°C. The films measured at room temperature and 100°C showed fatigue-free characteristics up to 1011 cycles under 5 V bipolar square pulses. SBT films show the retention loss of only 6% after 10 years at 100°C. The leakage current density is less than 4.5 × 10-7 μA/cm2 at an applied voltage of 3 V at 75°C. The dominant transport mechanism of SBT films was an interface limited Schottky emission. The Pt/SBT contacts have a Schottky barrier height of ΦB = 0.8 ∼ 1.04 eV.

AB - Fatigue-free bilayered SrBi2Ta2O9 (SBT) films were successfully prepared on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering. The applied voltage showing the maximum capacitance decreases with increasing temperature. The remanent polarization (2Pr) and the coercive field (2Ec) obtained for the SBT films were 13 μ/cm2 and 128 kV/cm at an applied voltage of 5 V at 30°C. The films measured at room temperature and 100°C showed fatigue-free characteristics up to 1011 cycles under 5 V bipolar square pulses. SBT films show the retention loss of only 6% after 10 years at 100°C. The leakage current density is less than 4.5 × 10-7 μA/cm2 at an applied voltage of 3 V at 75°C. The dominant transport mechanism of SBT films was an interface limited Schottky emission. The Pt/SBT contacts have a Schottky barrier height of ΦB = 0.8 ∼ 1.04 eV.

UR - https://www.scopus.com/pages/publications/0032045322

U2 - 10.1149/1.1838459

DO - 10.1149/1.1838459

M3 - Article

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SN - 0013-4651

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JF - Journal of the Electrochemical Society

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ER -

Temperature dependence of the electrical properties of SrBi₂Ta₂O₉ thin films deposited by radio-frequency magnetron sputtering

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