Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO

K. Ip; Y. W. Heo; K. H. Baik; D. P. Norton; S. J. Pearton; S. Kim; J. R. LaRoche; F. Ren

doi:10.1063/1.1705726

Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO

K. Ip, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton, S. Kim, J. R. LaRoche, F. Ren

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Abstract

The Schottky barrier height of Pt contacts on n-type thin film ZnO was analyzed which was deposited by pulsed laser deposition. The Schottky barrier height was obtained from current-voltage measurements as function of temperature. Large reverse current magnitude was also observed as compared to that predicted by thermionic emission. The results show rectifying behavior of Pt contacts on ZnO with barrier height at 25°C of 0.61 eV. After annealing this barrier height reduced to 0.42 eV at 300°C.

Original language	English
Pages (from-to)	2835-2837
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	15
DOIs	https://doi.org/10.1063/1.1705726
State	Published - 12 Apr 2004

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title = "Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO",

abstract = "The Schottky barrier height of Pt contacts on n-type thin film ZnO was analyzed which was deposited by pulsed laser deposition. The Schottky barrier height was obtained from current-voltage measurements as function of temperature. Large reverse current magnitude was also observed as compared to that predicted by thermionic emission. The results show rectifying behavior of Pt contacts on ZnO with barrier height at 25°C of 0.61 eV. After annealing this barrier height reduced to 0.42 eV at 300°C.",

author = "K. Ip and Heo, {Y. W.} and Baik, {K. H.} and Norton, {D. P.} and Pearton, {S. J.} and S. Kim and LaRoche, {J. R.} and F. Ren",

year = "2004",

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T1 - Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO

AU - Ip, K.

AU - Heo, Y. W.

AU - Baik, K. H.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Kim, S.

AU - LaRoche, J. R.

AU - Ren, F.

PY - 2004/4/12

Y1 - 2004/4/12

N2 - The Schottky barrier height of Pt contacts on n-type thin film ZnO was analyzed which was deposited by pulsed laser deposition. The Schottky barrier height was obtained from current-voltage measurements as function of temperature. Large reverse current magnitude was also observed as compared to that predicted by thermionic emission. The results show rectifying behavior of Pt contacts on ZnO with barrier height at 25°C of 0.61 eV. After annealing this barrier height reduced to 0.42 eV at 300°C.

AB - The Schottky barrier height of Pt contacts on n-type thin film ZnO was analyzed which was deposited by pulsed laser deposition. The Schottky barrier height was obtained from current-voltage measurements as function of temperature. Large reverse current magnitude was also observed as compared to that predicted by thermionic emission. The results show rectifying behavior of Pt contacts on ZnO with barrier height at 25°C of 0.61 eV. After annealing this barrier height reduced to 0.42 eV at 300°C.

UR - http://www.scopus.com/inward/record.url?scp=2342578796&partnerID=8YFLogxK

U2 - 10.1063/1.1705726

DO - 10.1063/1.1705726

M3 - Article

AN - SCOPUS:2342578796

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VL - 84

SP - 2835

EP - 2837

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO

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