Temperature-dependent Cl2/Ar plasma etching of bulk single-crystal ZnO

W. T. Lim; I. K. Baek; J. W. Lee; E. S. Lee; M. H. Jeon; G. S. Cho; Y. W. Heo; D. P. Norton; S. J. Pearton

doi:10.1063/1.1618373

Temperature-dependent Cl₂/Ar plasma etching of bulk single-crystal ZnO

W. T. Lim, I. K. Baek, J. W. Lee, E. S. Lee, M. H. Jeon, G. S. Cho, Y. W. Heo, D. P. Norton, S. J. Pearton

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Abstract

The etching rate of bulk ZnO in Cl₂/Ar high density plasmas was discussed. Ion-assisted desorption of the ZnCl_x etch products was performed. It was found that the amount of residual chlorine on the ZnO surface decreases with increasing etch temperature.

Original language	English
Pages (from-to)	3105-3107
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	15
DOIs	https://doi.org/10.1063/1.1618373
State	Published - 13 Oct 2003

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title = "Temperature-dependent Cl2/Ar plasma etching of bulk single-crystal ZnO",

abstract = "The etching rate of bulk ZnO in Cl2/Ar high density plasmas was discussed. Ion-assisted desorption of the ZnClx etch products was performed. It was found that the amount of residual chlorine on the ZnO surface decreases with increasing etch temperature.",

author = "Lim, {W. T.} and Baek, {I. K.} and Lee, {J. W.} and Lee, {E. S.} and Jeon, {M. H.} and Cho, {G. S.} and Heo, {Y. W.} and Norton, {D. P.} and Pearton, {S. J.}",

year = "2003",

month = oct,

day = "13",

doi = "10.1063/1.1618373",

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journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Temperature-dependent Cl2/Ar plasma etching of bulk single-crystal ZnO

AU - Lim, W. T.

AU - Baek, I. K.

AU - Lee, J. W.

AU - Lee, E. S.

AU - Jeon, M. H.

AU - Cho, G. S.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Pearton, S. J.

PY - 2003/10/13

Y1 - 2003/10/13

N2 - The etching rate of bulk ZnO in Cl2/Ar high density plasmas was discussed. Ion-assisted desorption of the ZnClx etch products was performed. It was found that the amount of residual chlorine on the ZnO surface decreases with increasing etch temperature.

AB - The etching rate of bulk ZnO in Cl2/Ar high density plasmas was discussed. Ion-assisted desorption of the ZnClx etch products was performed. It was found that the amount of residual chlorine on the ZnO surface decreases with increasing etch temperature.

UR - http://www.scopus.com/inward/record.url?scp=0242304456&partnerID=8YFLogxK

U2 - 10.1063/1.1618373

DO - 10.1063/1.1618373

M3 - Article

AN - SCOPUS:0242304456

SN - 0003-6951

VL - 83

SP - 3105

EP - 3107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Temperature-dependent Cl₂/Ar plasma etching of bulk single-crystal ZnO

Abstract

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