Temperature-dependent Cl2/Ar plasma etching of bulk single-crystal ZnO

W. T. Lim; I. K. Baek; J. W. Lee; E. S. Lee; M. H. Jeon; G. S. Cho; Y. W. Heo; D. P. Norton; S. J. Pearton

doi:10.1063/1.1618373

Temperature-dependent Cl₂/Ar plasma etching of bulk single-crystal ZnO

W. T. Lim, I. K. Baek, J. W. Lee, E. S. Lee, M. H. Jeon, G. S. Cho, Y. W. Heo, D. P. Norton, S. J. Pearton

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30 Scopus citations

Abstract

The etching rate of bulk ZnO in Cl₂/Ar high density plasmas was discussed. Ion-assisted desorption of the ZnCl_x etch products was performed. It was found that the amount of residual chlorine on the ZnO surface decreases with increasing etch temperature.

Original language	English
Pages (from-to)	3105-3107
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	15
DOIs	https://doi.org/10.1063/1.1618373
State	Published - 13 Oct 2003

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title = "Temperature-dependent Cl2/Ar plasma etching of bulk single-crystal ZnO",

abstract = "The etching rate of bulk ZnO in Cl2/Ar high density plasmas was discussed. Ion-assisted desorption of the ZnClx etch products was performed. It was found that the amount of residual chlorine on the ZnO surface decreases with increasing etch temperature.",

author = "Lim, \{W. T.\} and Baek, \{I. K.\} and Lee, \{J. W.\} and Lee, \{E. S.\} and Jeon, \{M. H.\} and Cho, \{G. S.\} and Heo, \{Y. W.\} and Norton, \{D. P.\} and Pearton, \{S. J.\}",

year = "2003",

month = oct,

day = "13",

doi = "10.1063/1.1618373",

language = "English",

volume = "83",

pages = "3105--3107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Temperature-dependent Cl2/Ar plasma etching of bulk single-crystal ZnO

AU - Lim, W. T.

AU - Baek, I. K.

AU - Lee, J. W.

AU - Lee, E. S.

AU - Jeon, M. H.

AU - Cho, G. S.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Pearton, S. J.

PY - 2003/10/13

Y1 - 2003/10/13

N2 - The etching rate of bulk ZnO in Cl2/Ar high density plasmas was discussed. Ion-assisted desorption of the ZnClx etch products was performed. It was found that the amount of residual chlorine on the ZnO surface decreases with increasing etch temperature.

AB - The etching rate of bulk ZnO in Cl2/Ar high density plasmas was discussed. Ion-assisted desorption of the ZnClx etch products was performed. It was found that the amount of residual chlorine on the ZnO surface decreases with increasing etch temperature.

UR - https://www.scopus.com/pages/publications/0242304456

U2 - 10.1063/1.1618373

DO - 10.1063/1.1618373

M3 - Article

AN - SCOPUS:0242304456

SN - 0003-6951

VL - 83

SP - 3105

EP - 3107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Temperature-dependent Cl₂/Ar plasma etching of bulk single-crystal ZnO

Abstract

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