Temperature-dependent DC Characteristics of Homojunction InGaAs vertical Fin TFETs

Ji Min Baek, Dae Hyun Kim

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field-Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating and the high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthreshold swing of 80 mV/decade for drain voltage (VDS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, the subthreshold swing at gate voltage (VGS) = threshold voltage (VT), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.

Original languageEnglish
Pages (from-to)275-278
Number of pages4
JournalJournal of Sensor Science and Technology
Volume29
Issue number4
DOIs
StatePublished - Jul 2020

Keywords

  • InGaAs
  • subthreshold swing
  • temperature-dependent
  • TFET
  • tunneling
  • vertical

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