Abstract
In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field-Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating and the high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthreshold swing of 80 mV/decade for drain voltage (VDS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, the subthreshold swing at gate voltage (VGS) = threshold voltage (VT), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.
Original language | English |
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Pages (from-to) | 275-278 |
Number of pages | 4 |
Journal | Journal of Sensor Science and Technology |
Volume | 29 |
Issue number | 4 |
DOIs | |
State | Published - Jul 2020 |
Keywords
- InGaAs
- subthreshold swing
- temperature-dependent
- TFET
- tunneling
- vertical