Abstract
A new class of silicon-based copolymers containing Ru(II)-chelated complexes for new red light-emitting materials was developed by well-known Heck reaction between distyrylsilane monomer and the difunctionalized metal-chelated complexes. Ru(II)-chelated copolymers I and II showed one strong band approximately 265-289 nm for ligand units, one strong absorption band approximately 386-392 nm for π-conjugated backbones, and a broad shoulder metal-to-ligand charge transfer band approximately 460-465 nm. Ru(II)-chelated polymers exhibited a negligibly broad band approximately 495-500 nm in the greenish blue region and one/or two strong bands in the red region at room temperature. The photoluminescent (PL) properties of all materials as a function of temperatures were also investigated. With a photoexcitation wavelength of 325 nm at various temperatures, their PL intensity approximately 673-675 nm increased gradually with decreasing temperature, due to the restraint of the thermal relaxation decay.
| Original language | English |
|---|---|
| Pages (from-to) | 111-115 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 417 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - 30 Sep 2002 |
| Event | Proceedings of the International Conference on Materials for - Singapore, Singapore Duration: 1 Jul 2001 → 6 Jul 2001 |
Keywords
- Electroluminescence
- Metal-chelated complex
- Metal-to-ligand charge transfer
- Silicon-based copolymers