@inproceedings{2d75ac4a24e847cab0ae38a0caa5f12d,
title = "Terahertz In0.8Ga0.2As quantum-well HEMTs toward 6G applications",
abstract = "We present the systematic analysis of Lg scaling behavior and the impact of the side-recess spacing (L-\{side\}) on DC and high-frequency characteristics of In0.8 Ga0.2 As QW HEMTs with Lg from 10 mu mathrm\{m\} to 20 nm, aiming to explore the scaling limit of fmax and thereby demonstrate THz devices. The fabricated L-\{g\}= 20 nm device with L-\{side\} = 150 nm exhibited \{DIBL\}=60 mV/V and f-\{T\}/ f-\{max\} quad =0.75 /1.1 THz, while the device showed with L-\{side\}=50 nm \{DIBL\}=110 mV/V and f-\{T\}/ f-\{max\}=0.72 /0.53. Strict control of short-channel effects from the viewpoint of DIBL was central to maximize the enhancement of fmax as Lg scaled down aggressively. Moreover, we explained the physical mechanism of the decrease in fmax for HEMTs with Lg scaled down to sub-50 nm. The results in this work represent the best balance of fT and fmax in any transistor technology and the highest fT in any FET technology.",
author = "Park, \{Wan Soo\} and Jo, \{Hyeon Bhin\} and Kim, \{Hyo Jin\} and Choi, \{Su Min\} and Yoo, \{Ji Hoon\} and Kim, \{Ji Hun\} and Jeong, \{Hyeon Seok\} and Sethu George and Beak, \{Ji Min\} and Lee, \{In Geun\} and Kim, \{Tae Woo\} and Kim, \{Sang Kuk\} and Jacob Yun and Ted Kim and Takuya Tsutsumi and Hiroki Sugiyama and Hideaki Matsuzaki and Lee, \{Jae Hak\} and Kim, \{Dae Hyun\}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",
year = "2022",
doi = "10.1109/IEDM45625.2022.10019567",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1141--1144",
booktitle = "2022 International Electron Devices Meeting, IEDM 2022",
address = "United States",
}